Datasheet BF998, BF998R - 2

NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES
Short channel transistor with high forward transfer handbook, halfpage d admittance to input capacitance ratio 4 3 Low noise gain controlled amplifier up to 1 GHz. g2 g1
APPLICATIONS
VHF and UHF applications with 12 V supply voltage, such as television tuners and professional 1 2 communications equipment. s,b Top view MAM039
DESCRIPTION Marking code:
MOp. Depletion type field effect transistor in a plastic Fig.1 Simplified outline (SOT143B) microminiature SOT143B or SOT143R package with and symbol; BF998. source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. d
CAUTION
handbook, halfpage 3 4 The device is supplied in an antistatic package. The g gate-source input must be protected against static 2 g discharge during transport or handling. 1
PINNING
2 1
PIN SYMBOL DESCRIPTION
s,b Top view MAM040 1 s, b source 2 d drain
Marking code:
MOp. 3 g2 gate 2 Fig.2 Simplified outline (SOT143R) 4 g1 gate 1 and symbol; BF998R.
QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VDS drain-source voltage  12 V ID drain current  30 mA Ptot total power dissipation  200 mW y  fs forward transfer admittance 24  mS Cig1-s input capacitance at gate 1 2.1  pF Crs reverse transfer capacitance f = 1 MHz 25  fF F noise figure f = 800 MHz 1  dB Tj operating junction temperature  150 C 1996 Aug 01 2 Document Outline Features Applications Description Pinning Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outlines Data sheet status Definitions Disclaimers