Datasheet BF998, BF998R - 4
| 描述 | Silicon N-channel dual-gate MOS-FETs |
| 页数 / 页 | 15 / 4 — THERMAL CHARACTERISTICS. SYMBOL. PARAMETER. CONDITIONS. VALUE. UNIT. … |
| 文件格式/大小 | PDF / 286 Kb |
| 文件语言 | 英语 |
THERMAL CHARACTERISTICS. SYMBOL. PARAMETER. CONDITIONS. VALUE. UNIT. Notes. STATIC CHARACTERISTICS. MIN. MAX. Note. DYNAMIC CHARACTERISTICS
该数据表的模型线
文件文字版本
link to page 4 link to page 4 link to page 4 link to page 4 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air; BF998 note 1 460 K/W note 2 500 K/W Rth j-a thermal resistance from junction to ambient in free air; BF998R note 1 500 K/W
Notes
1. Device mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm. 2. Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
Tj = 25 C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V(BR)G1-SS gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-SS = 10 mA 6 20 V V(BR)G2-SS gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-SS = 10 mA 6 20 V V(P)G1-S gate 1-source cut-off voltage VG2-S = 4 V; VDS = 8 V; ID = 20 A 2.0 V V(P)G2-S gate 2-source cut-off voltage VG1-S = 0; VDS = 8 V; ID = 20 A 1.5 V IDSS drain-source current VG2-S = 4 V; VDS = 8 V; VG1-S = 0; note 1 2 18 mA IG1-SS gate 1 cut-off current VG2-S = VDS = 0; VG1-S = 5 V 50 nA IG2-SS gate 2 cut-off current VG1-S = VDS = 0; VG2-S = 5 V 50 nA
Note
1. Measured under pulse condition.
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 C; VDS = 8 V; VG2-S = 4 V; ID = 10 mA.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
y fs forward transfer admittance f = 1 kHz 21 24 mS Cig1-s input capacitance at gate 1 f = 1 MHz 2.1 2.5 pF Cig2-s input capacitance at gate 2 f = 1 MHz 1.2 pF Cos output capacitance f = 1 MHz 1.05 pF Crs reverse transfer capacitance f = 1 MHz 25 fF F noise figure f = 200 MHz; G S = 2 mS; BS = BSopt 0.6 dB f = 800 MHz; G S = 3.3 mS; BS = BSopt 1.0 dB 1996 Aug 01 4 Document Outline Features Applications Description Pinning Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outlines Data sheet status Definitions Disclaimers
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air; BF998 note 1 460 K/W note 2 500 K/W Rth j-a thermal resistance from junction to ambient in free air; BF998R note 1 500 K/W
Notes
1. Device mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm. 2. Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
Tj = 25 C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V(BR)G1-SS gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-SS = 10 mA 6 20 V V(BR)G2-SS gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-SS = 10 mA 6 20 V V(P)G1-S gate 1-source cut-off voltage VG2-S = 4 V; VDS = 8 V; ID = 20 A 2.0 V V(P)G2-S gate 2-source cut-off voltage VG1-S = 0; VDS = 8 V; ID = 20 A 1.5 V IDSS drain-source current VG2-S = 4 V; VDS = 8 V; VG1-S = 0; note 1 2 18 mA IG1-SS gate 1 cut-off current VG2-S = VDS = 0; VG1-S = 5 V 50 nA IG2-SS gate 2 cut-off current VG1-S = VDS = 0; VG2-S = 5 V 50 nA
Note
1. Measured under pulse condition.
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 C; VDS = 8 V; VG2-S = 4 V; ID = 10 mA.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
y fs forward transfer admittance f = 1 kHz 21 24 mS Cig1-s input capacitance at gate 1 f = 1 MHz 2.1 2.5 pF Cig2-s input capacitance at gate 2 f = 1 MHz 1.2 pF Cos output capacitance f = 1 MHz 1.05 pF Crs reverse transfer capacitance f = 1 MHz 25 fF F noise figure f = 200 MHz; G S = 2 mS; BS = BSopt 0.6 dB f = 800 MHz; G S = 3.3 mS; BS = BSopt 1.0 dB 1996 Aug 01 4 Document Outline Features Applications Description Pinning Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outlines Data sheet status Definitions Disclaimers