Datasheet UF5400, UF5401, UF5402, UF5403, UF5404, UF5405, UF5406, UF5407, UF5408 (Vishay) - 3

UF5400, UF5401, UF5402, UF5403, UF5404, UF5405, UF5406, UF5407, UF5408
www.vishay.com Vishay General Semiconductor 150 100 T = 55 °C T = 125 °C A J 8.3 ms Single Half Sine-Wave 125 T = 100 °C J ent (A) 10 T = 125 °C J 100 e Leakage s T = 100 °C ge Curr J ur 75 S 1 Rever ent (μA) T = 25 °C d s J Curr 50 0.1 tantaneou 25 s Peak Forwar In UF5400 thru UF5404 UF5405 thru UF5408 0 0.01 1 10 100 0 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Reverse Leakage Characteristics 100 160 T = 25 °C J UF5400 thru UF5404 140 f = 1.0 MHz nt (A) V = 50 mV e sig p-p 10 120 d Curr ance (pF) 100 UF5400 thru UF5404 1 UF5405 thru UF5408 UF5405 thru UF5408 Forwar s 80 60 0.1 Junction Capacit tantaneou T = 25 °C s J 40 In Pulse Width = 300 μs 1 % Duty Cycle 0.01 20 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 4 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-201AD
1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Revision: 19-Feb-16
3
Document Number: 88756 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000