Datasheet BSC093N04LS G - 3

BSC093N04LS G Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics
Input capacitance C iss - 1400 1900 pF V Output capacitance C GS=0 V, V DS=20 V, oss - 340 450 f =1 MHz Reverse transfer capacitance Crss - 16 - Turn-on delay time t d(on) - 3.6 - ns Rise time t r - 2.4 - V DD=20 V, V GS=10 V, I Turn-off delay time t D=30 A, R G,ext=1.6 W d(off) - 16 - Fall time t f - 2.8 - Gate Charge Characteristics5) Gate to source charge Q gs - 4.9 - nC Gate charge at threshold Q g(th) - 2.3 - Gate to drain charge Q gd - 2.0 - V DD=20 V, I D=30 A, V Switching charge Q GS=0 to 10 V sw - 4.6 - Gate charge total Q g - 18 24 Gate plateau voltage V plateau - 3.5 - V V DD=20 V, I D=30 A, Gate charge total Q g - 8.6 11.4 nC V GS=0 to 4.5 V V DS=0.1 V, Gate charge total, sync. FET Q g(sync) - 17 - V GS=0 to 10 V Output charge Q oss V DD=20 V, V GS=0 V - 13 -
Reverse Diode
Diode continuous forward current I S - - 29 A T C=25 °C Diode pulse current I S,pulse - - 196 V GS=0 V, I F=40 A, Diode forward voltage V SD - 0.9 1.2 V T j=25 °C V R=20 V, I F=I S, Reverse recovery charge Q rr - 15 - nC di F/dt =400 A/µs 5) See figure 16 for gate charge parameter definition Rev. 2.1 page 3 2013-05-21