Datasheets - 双极阵列和模块 NXP
小节: "双极阵列和模块"
制造商: "NXP"
制造商
Allegro Analog Devices Central Semiconductor Diodes Fairchild Infineon Intersil Magnatec MCC National Semiconductor NTE Electronics NXP ON Semiconductor Philips Rohm Semelab Semtech Solid State STMicroelectronics Texas Instruments THAT Corporation Toshiba搜索结果: 120 输出量: 1-20
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65 V，100 mA NPN / NPN通用晶体管对 规格： 集电极发射极电压V（br）ceo：65 V 直流集电极电流：100 mA 直流电流增益：200 针数：6 工作温度范围：-55°C至+ 150°C 功耗：250 mW 晶体管外壳样式：SOT-457 晶体管极性：NPN RoHS：是的 SVHC：否SVHC（2011年12月19日）
65 V，100 mA NPN / PNP通用晶体管
- 65 V，100 mA NPN / NPN通用晶体管对
Part Number: BC856S Manufacturer: NXP Description: TRANSISTOR, PNP/PNP, 65 V, SOT363 Download Data Sheet Docket: BC856S 65 V, 100 mA PNP/PNP general-purpose transistor Rev. 02 -- 19 February 2009 Product data sheet 1. Product profile 1.1 General ...- Part Number: PUMX1 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, NPNNPN, SOT363 Download Data Sheet Docket: PUMX1 40 V, 100 mA NPN/NPN general-purpose transistor Rev. 04 -- 20 January 2010 Product data sheet 1. Product profile 1.1 General ...
Part Number: PUMH19 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, DUAL, SOT-363 Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 100 DC Current Gain: 1 mA Full Power Rating Temperature: 25°C Max Current Ic ...- Part Number: PUMH15 Manufacturer: NXP Description: TRANSISTOR, DUAL DIGITAL SOT-363 Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 30 DC Current Gain: 10 mA Full Power Rating Temperature: 25°C Max Current Ic ...
- Part Number: PUMF12 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, DUAL, SOT-363 Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 120 DC Current Gain: 1 mA Frequency: 100 Hz Max Current Gain Hfe: 80 Max Current ...
- Part Number: PUMB9 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, DUAL, SOT-363 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 100 DC Current Gain: 5 mA Full Power Rating Temperature: 25°C ...
- Part Number: PUMB13 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, DUAL, SOT-363 Simulation Model Specifications: Collector Emitter Voltage V(br)ceo: 50 V Continuous Collector Current Ic Max: 100 A Current Ic Continuous a Max: 100 A DC Current ...
- Part Number: PUMB1 Manufacturer: NXP Description: TRANSISTOR, DUAL DIGITAL SOT-363 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 60 DC Current Gain: 5 mA Full Power Rating Temperature: 25°C Max ...
Part Number: PMD2001D Manufacturer: NXP Description: TRANSISTOR, NPN/PNP, 40 V, SSOT-6 Download Data Sheet Docket: PMD2001D MOSFET driver Rev. 02 -- 28 August 2009 Product data sheet 1. Product profile 1.1 General description Simulation Model ...
Part Number: PEMZ7 Manufacturer: NXP Description: TRANSISTOR, NPN/PNP, SOT-666 Simulation Model Specifications: Collector Emitter Voltage V(br)ceo: 12 V Continuous Collector Current Ic Max: 0.1 A Current Ic Continuous a Max: 0.5 A DC Current Gain ...- Part Number: PBLS4005Y Manufacturer: NXP Description: TRANSISTOR, SWITCH SOT-363 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 40 V Max Current Ic: 1000 mA Max Power Dissipation Ptot: 300 mW Mounting Type: SMD Number of ...
- Part Number: PBLS4005V Manufacturer: NXP Description: TRANSISTOR, SWITCH, SOT-666 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 40 V Max Current Ic Continuous a: 1000 mA Max Current Ic: 1000 mA Max Power Dissipation Ptot: ...
- Part Number: PBLS4004Y Manufacturer: NXP Description: TRANSISTOR, SWITCH, SOT-363 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 40 V Max Current Ic: 1000 mA Max Power Dissipation Ptot: 300 mW Mounting Type: SMD Number of ...
- Part Number: PBLS4001Y Manufacturer: NXP Description: TRANSISTOR, SWITCH, SOT-363 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 40 V DC Current Gain Min: 200 DC Current Gain: 10 mA Frequency: 100 Hz Max Current Gain Hfe: ...
- Part Number: PBLS1504V Manufacturer: NXP Description: TRANSISTOR, SWITCH SOT-666 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 15 V DC Current Gain Min: 200 DC Current Gain: 10 mA Frequency: 100 Hz Max Current Gain Hfe: ...
- Part Number: PUMH18 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, DUAL, SOT-363 Specifications: Collector Emitter Voltage V(br)ceo: 50 V Collector Emitter Voltage Vces: 100 mV Continuous Collector Current Ic Max: 100 A Current Ic Continuous a ...
- Part Number: PBSS3515VS Manufacturer: NXP Description: TRANSISTOR, PNP, SOT-666 Download Data Sheet Simulation Model Specifications: Collector Emitter Voltage V(br)ceo: 15 V Collector Emitter Voltage Vces: -25 mV Continuous Collector Current Ic ...
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