Datasheets - IGBT单晶体管 Toshiba
小节: "IGBT单晶体管"
制造商: "Toshiba"
制造商
APT Diodes Dynex Fairchild Fuji Electric Genesic Semiconductor Infineon International Rectifier Intersil IXYS NTE Electronics ON Semiconductor Powerex Sanyo Semikron STMicroelectronics Toshiba Vishay搜索结果: 13 输出量: 1-13
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Part Number: GT50J325 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(LH) Download Data Sheet Docket: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching ...
Part Number: GT50J102 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(LH) Download Data Sheet Docket: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL ...
Part Number: GT30J324 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(N) Download Data Sheet Docket: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching ...- Part Number: GT25Q102 Manufacturer: Toshiba Description: IGBT, 1200 V, TO-3P(LH) Download Data Sheet Docket: GT25Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications Unit: mm ...
- Part Number: GT20J101 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(N) Download Data Sheet Docket: GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101 High Power Switching Applications Unit: mm · · · · ...
Part Number: GT15J301 Manufacturer: Toshiba Description: IGBT, 600 V, TO-220NIS Download Data Sheet Docket: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL ...- Part Number: GT10Q101 Manufacturer: Toshiba Description: IGBT, 1200 V, TO-3P(N) Download Data Sheet Docket: GT10Q101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm The 3rd ...
- Part Number: GT30J301 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(N) Download Data Sheet Docket: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL ...
- Part Number: GT15J321 Manufacturer: Toshiba Description: IGBT, 600 V, TO-220NIS Download Data Sheet Docket: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching ...
- Part Number: GT10J303 Manufacturer: Toshiba Description: IGBT, 600 V, TO-220NIS Download Data Sheet Docket: Specifications: Transistor Type: HP SW IGBT Max Voltage Vce Sat: 2.7 V Collector-to-Emitter Breakdown Voltage: 600 V Transistor Case Style: ...
- Part Number: GT20J321 Manufacturer: Toshiba Description: IGBT, 600 V, TO-220NIS Download Data Sheet Specifications: Transistor Type: IGBT Max Voltage Vce Sat: 2.45 V Collector-to-Emitter Breakdown Voltage: 600 V Transistor Case Style: TO-220NIS ...
- Part Number: GT20J301 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(N) Download Data Sheet Specifications: Transistor Type: HP SW IGBT Max Voltage Vce Sat: 2.7 V Collector-to-Emitter Breakdown Voltage: 600 V Transistor Case Style: TO-3P (N) ...
- Part Number: GT15Q301 Manufacturer: Toshiba Description: IGBT, 1200 V, TO-3P(N) Download Data Sheet Specifications: Transistor Type: HP SW IGBT Max Voltage Vce Sat: 2.7 V Collector-to-Emitter Breakdown Voltage: 1200 V Transistor Case Style: TO-3P ...
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