Datasheets - IGBT单晶体管 - 2
小节: "IGBT单晶体管"
制造商
APT Diodes Dynex Fairchild Fuji Electric Genesic Semiconductor Infineon International Rectifier Intersil IXYS NTE Electronics ON Semiconductor Powerex Sanyo Semikron STMicroelectronics Toshiba Vishay搜索结果: 624 输出量: 21-40
视图: 清单 / 图片
- F系列受保护IGBT将采用RC-H5技术的1350 V，20 A IGBT与独特的保护栅极驱动器IC结合在一起，并采用TO-247 6引脚封装，用于感应烹饪应用。
Part Number: SKW07N120 Manufacturer: Infineon Description: IGBT, NPT, 1200 V, 16.5 A, 125 W, TO247 Download Data Sheet Docket: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode · Lower Eoff compared to ...- Part Number: SGW25N120 Manufacturer: Infineon Description: IGBT, NPT, 1200 V, 46 A, 313 W, TO247-3 Download Data Sheet Docket: SGW25N120 Fast IGBT in NPT-technology · 40% lower Eoff compared to previous generation · Short circuit withstand time ...
- Part Number: SGW15N60 Manufacturer: Infineon Description: IGBT, NPT, 600 V, 31 A, 139 W, TO247-3 Download Data Sheet Docket: SGP15N60 SGW15N60 Fast IGBT in NPT-technology · 75% lower Eoff compared to previous generation combined with low conduction ...
Part Number: SGP02N120 Manufacturer: Infineon Description: IGBT, NPT, 1200 V, 6.2 A, 62 W, TO220-3 Specifications: Collector Emitter Voltage V(br)ceo: 1.2 kV Collector Emitter Voltage Vces: 3.1 V DC Collector Current: 6.2 A Number of Pins: 3 ...- Part Number: NGTG15N60S1EG Manufacturer: ON Semiconductor Description: IGBT, 600 V, 15 A, TO-220-3 Download Data Sheet Docket: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost ...
- Part Number: NGTB25N120LWG Manufacturer: ON Semiconductor Description: IGBT, 1200 V, 25 A, FS1, TO-247-3 Download Data Sheet Docket: NGTB25N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop ...