Datasheets - MOSFET阵列和模块 - 2

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• 晶体管，晶体管阵列和模块
• MOSFET阵列和模块

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21. TC2320 — Datasheet Microchip
    MOSFET阵列和模块 Microchip TC2320
    TC2320由采用8引脚SOIC封装的高电压，低阈值N和P沟道MOSFET组成
22. TC1550TG-G — Datasheet Microchip
    MOSFET阵列和模块 Microchip TC1550 TC1550TG-G
    TC1550由采用8引脚SOIC封装的高压N沟道和P沟道MOSFET组成

23. TC1550 — Datasheet Microchip
    MOSFET阵列和模块 Microchip TC1550
    TC1550由采用8引脚SOIC封装的高压N沟道和P沟道MOSFET组成
24. TBD62083APG — Datasheet Toshiba
    MOSFET阵列和模块 Toshiba TBD62083APG
    DMOS晶体管阵列
25. TBD62083AFWG — Datasheet Toshiba
    MOSFET阵列和模块 Toshiba TBD62083AFWG
    DMOS晶体管阵列
26. TBD62083AFNG — Datasheet Toshiba
    MOSFET阵列和模块 Toshiba TBD62083AFNG
    DMOS晶体管阵列
27. TBD62083AFG — Datasheet Toshiba
    MOSFET阵列和模块 Toshiba TBD62083AFG
    DMOS晶体管阵列
28. TBD62381APG — Datasheet Toshiba
    MOSFET阵列和模块 Toshiba TBD62381APG
    DMOS晶体管阵列
29. TBD62381AFWG — Datasheet Toshiba
    MOSFET阵列和模块 Toshiba TBD62381AFWG
    DMOS晶体管阵列
30. TBD62381AFNG — Datasheet Toshiba
    MOSFET阵列和模块 Toshiba TBD62381AFNG
    DMOS晶体管阵列
31. IRFH4257DTRPbF — Datasheet International Rectifier
    MOSFET阵列和模块 International Rectifier IRFH4257D IRFH4257DPbF IRFH4257DTRPbF
    HEXFET功率MOSFET。采用高性能4×5 PQFN功率块封装的FastIRFET双功率MOSFET
32. AUIRF7341Q — Datasheet International Rectifier -
    MOSFET阵列和模块 International Rectifier AUIRF7341Q
    

    Part Number: AUIRF7341Q Manufacturer: International Rectifier Description: MOSFET, NN CH, 55 V, 5.1 A, SO8 Download Data Sheet Docket: AUTOMOTIVE MOSFET PD - 96362A AUIRF7341Q HEXFET® Power MOSFET 8 7 Specifications: Continuous Drain Current Id: ...
33. PMGD290XN — Datasheet NXP -
    MOSFET阵列和模块 NXP PMGD290XN
    

    Part Number: PMGD290XN Manufacturer: NXP Description: MOSFET, NN CH, 20 V, 0.86 A, SOT363 Download Data Sheet Docket: PMGD290XN Dual N-channel µTrenchMOSTM extremely low level FET MBD128 Rev. 01 -- 26 February 2004 Product data Specifications: ...
34. PMGD400UN — Datasheet NXP -
    MOSFET阵列和模块 NXP PMGD400UN
    

    Part Number: PMGD400UN Manufacturer: NXP Description: MOSFET, NN CH, 30 V, 0.71 A, SOT363 Download Data Sheet Docket: PMGD400UN Dual N-channel µTrenchMOSTM ultra low level FET MBD128 Rev. 01 -- 3 March 2004 Product data Specifications: Continuous ...
35. ZXMP6A18DN8TA — Datasheet Diodes -
    MOSFET阵列和模块 Diodes ZXMP6A18DN8TA
    

    Part Number: ZXMP6A18DN8TA Manufacturer: Diodes Description: MOSFET, PP CH, 60 V, 4.8 A, SO8 Download Data Sheet Docket: ZXMP6A18DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This ...
36. ZXMHC3F381N8TC — Datasheet Diodes -
    MOSFET阵列和模块 Diodes ZXMHC3F381N8TC
    

    Part Number: ZXMHC3F381N8TC Manufacturer: Diodes Description: MOSFET, COMP, H/BRIDE, 30 V, SO8 Download Data Sheet Docket: A Product Line of Diodes Incorporated ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device ...
37. ZXMHC3A01T8TA — Datasheet Diodes -
    MOSFET阵列和模块 Diodes ZXMHC3A01T8TA
    

    Part Number: ZXMHC3A01T8TA Manufacturer: Diodes Description: MOSFET, COMP, H/BRIDE, 30 V, SO8 Download Data Sheet Docket: ZXMHC3A01T8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel = V(BR)DSS= 30V : RDS(on)= 0.12 ; ID= 3.1A ...
38. ZXMC4A16DN8TA — Datasheet Diodes -
    MOSFET阵列和模块 Diodes ZXMC4A16DN8TA
    

    Part Number: ZXMC4A16DN8TA Manufacturer: Diodes Description: MOSFET, NP CH, 40 V, 5.2A/4.7A, SO8 Download Data Sheet Docket: ZXMC4A16DN8 COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V(BR)DSS= 40V : RDS(on)= 0.05 ; ID= 5.2A ...
39. ZXMC4559DN8TC — Datasheet Diodes -
    MOSFET阵列和模块 Diodes ZXMC4559DN8TC
    

    Part Number: ZXMC4559DN8TC Manufacturer: Diodes Description: MOSFET, NP CH, 60 V, 4.7A/3.9A, SO8 Download Data Sheet Docket: ZXMC4559DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.055 ; ID= 4.7A ...
40. DMN2990UDJ — Datasheet Diodes -
    MOSFET阵列和模块 Diodes DMN2990UDJ
    

    Part Number: DMN2990UDJ Manufacturer: Diodes Description: MOSFET, NN CH, W ESD, 20 V, SOT963 Download Data Sheet Docket: DMN2990UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) max 0.99 @ VGS = 4.5V ID max TA = 25°C 450mA ...