Datasheets - 双极阵列和模块 - 5
小节: "双极阵列和模块"
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Allegro Analog Devices Central Semiconductor Diodes Fairchild Infineon Intersil Magnatec MCC National Semiconductor NTE Electronics NXP ON Semiconductor Philips Rohm Semelab Semtech Solid State STMicroelectronics Texas Instruments THAT Corporation Toshiba搜索结果: 400 输出量: 81-100
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Part Number: ULN2003ADR2G Manufacturer: ON Semiconductor Description: DARLINGTON TRANSISTOR ARRAY, NPN, 7, 50 V, SOIC Specifications: Continuous Collector Current Ic: 500 mA Number of Pins: 16 Number of Transistors: 7 Operating Temperature Range: ...
Part Number: MUN5312DW1T1G Manufacturer: ON Semiconductor Description: BRT TRANSISTOR, 50 V, 22K/22KOHM, SOT-363 Specifications: Collector Emitter Voltage V(br)ceo: 50 V DC Collector Current: -100 mA DC Current Gain: 100 Power Dissipation: 187 mW ...
Part Number: MJB44H11T4G Manufacturer: ON Semiconductor Description: POWER TRANSISTOR, NPN, 80 V, D2-PAK Specifications: Collector Emitter Voltage V(br)ceo: 80 V Number of Pins: 3 Operating Temperature Range: -55°C to +150°C Power Dissipation: 50 W ...- Part Number: MJB42CT4G Manufacturer: ON Semiconductor Description: POWER TRANSISTOR, PNP, -100 V D2-PAK Specifications: Collector Emitter Voltage V(br)ceo: 100 V Number of Pins: 3 Operating Temperature Range: -65°C to +150°C Power Dissipation: 65 W ...
- Part Number: MJB41CT4G Manufacturer: ON Semiconductor Description: POWER TRANSISTOR, NPN, 100 V, D2-PAK Specifications: Collector Emitter Voltage V(br)ceo: 100 V Number of Pins: 3 Operating Temperature Range: -65°C to +150°C Power Dissipation: 65 W ...
Part Number: MUN5335DW1T1G Manufacturer: ON Semiconductor Description: BRT TRANSISTOR, 50 V, 47K/2.2KOHM, SOT363 Specifications: Collector Emitter Voltage V(br)ceo: 50 V DC Collector Current: -100 mA DC Current Gain: 140 Power Dissipation: 187 mW ...- Part Number: MUN5313DW1T1G Manufacturer: ON Semiconductor Description: BRT TRANSISTOR, 50 V, 47K/47KOHM, SC88 Download Data Sheet Docket: MUN5311DW1T1G Series Dual Bias Resistor Transistors Preferred Devices NPN and PNP Silicon Surface Mount ...
- Part Number: MUN5230DW1T1G Manufacturer: ON Semiconductor Description: BRT TRANSISTOR, 50 V, 1K/1KOHM, SOT-363 Download Data Sheet Docket: MUN5211DW1T1G Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors ...
- Part Number: MUN5111DW1T1G Manufacturer: ON Semiconductor Description: BRT TRANSISTOR, 50 V, 10K/10KOHM, SOT-363 Download Data Sheet Docket: MUN5111DW1T1G Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors ...
Part Number: ULQ2004A Manufacturer: STMicroelectronics Description: DARLINGTON ARRAY, 2803, DIP18 Download Data Sheet Docket: ® ULN2801A ULN2802A - ULN2803A ULN2804A - ULN2805A EIGHT DARLINGTON ARRAYS . . . . . . . EIGHT DARLINGTONS WITH COMMON ...
Part Number: PUMH19 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, DUAL, SOT-363 Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 100 DC Current Gain: 1 mA Full Power Rating Temperature: 25°C Max Current Ic ...- Part Number: PUMH15 Manufacturer: NXP Description: TRANSISTOR, DUAL DIGITAL SOT-363 Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 30 DC Current Gain: 10 mA Full Power Rating Temperature: 25°C Max Current Ic ...
- Part Number: PUMF12 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, DUAL, SOT-363 Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 120 DC Current Gain: 1 mA Frequency: 100 Hz Max Current Gain Hfe: 80 Max Current ...
- Part Number: PUMB9 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, DUAL, SOT-363 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 100 DC Current Gain: 5 mA Full Power Rating Temperature: 25°C ...
- Part Number: PUMB13 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, DUAL, SOT-363 Simulation Model Specifications: Collector Emitter Voltage V(br)ceo: 50 V Continuous Collector Current Ic Max: 100 A Current Ic Continuous a Max: 100 A DC Current ...
- Part Number: PUMB1 Manufacturer: NXP Description: TRANSISTOR, DUAL DIGITAL SOT-363 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 60 DC Current Gain: 5 mA Full Power Rating Temperature: 25°C Max ...
Part Number: PMD2001D Manufacturer: NXP Description: TRANSISTOR, NPN/PNP, 40 V, SSOT-6 Download Data Sheet Docket: PMD2001D MOSFET driver Rev. 02 -- 28 August 2009 Product data sheet 1. Product profile 1.1 General description Simulation Model ...
Part Number: PEMZ7 Manufacturer: NXP Description: TRANSISTOR, NPN/PNP, SOT-666 Simulation Model Specifications: Collector Emitter Voltage V(br)ceo: 12 V Continuous Collector Current Ic Max: 0.1 A Current Ic Continuous a Max: 0.5 A DC Current Gain ...- Part Number: PBLS4005Y Manufacturer: NXP Description: TRANSISTOR, SWITCH SOT-363 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 40 V Max Current Ic: 1000 mA Max Power Dissipation Ptot: 300 mW Mounting Type: SMD Number of ...
- Part Number: PBLS4005V Manufacturer: NXP Description: TRANSISTOR, SWITCH, SOT-666 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 40 V Max Current Ic Continuous a: 1000 mA Max Current Ic: 1000 mA Max Power Dissipation Ptot: ...