Datasheet NTE Electronics 2N7000 — 数据表

2N7000
N−Ch, Enhancement Mode
Field Effect Transistor
TO−92 Type Package
Features:
D High Density Cell Design for Low RDS(ON)
D Voltage Controlled Small Signal Switch
D Rugged and Reliable
D High Saturation Current Capability D G
S Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Drain−Source Voltage, VDSS . 60V
Drain−Gate Voltage (RGS  1M), VDGR 60V
Gate−Source Voltage, VGS
Continuous . 20V
Non−Repetitive (tp  50s) . 40V
Maximum Drain Current, ID
Continuous . 200mA
Pulsed . 500mA
Maximum Power Dissipation, PD . 400mW
Derate above 25C . 3.2mW/C
Operating Junction Temperature Range, TJ −55 to +150C
Storage Temperature Range, Tstg −55 to +150C
Thermal Resistance, Junction−to−Ambient, Rth(JA) 312.5C/W …