Datasheet Microchip DN3545N3-G — 数据表

DN3545
N-Channel Depletion-Mode Vertical DMOS FET
Features General Description •
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• The DN3545 Depletion-mode normally-on transistor
uses an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well-proven silicongate manufacturing process. This combination produces a device with the power-handling capabilities of
bipolar transistors and the high-input impedance and
positive-temperature coefficient inherent in MetalOxide Semiconductor (MOS) devices. Characteristic of
all MOS structures, this device is free from thermal
runaway and thermally induced secondary breakdown. High Input Impedance
Low Input Capacitance
Fast Switching Speeds
Low On-Resistance
Free from Secondary Breakdown
Low Input and Output Leakage Applications
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Supertex inc. DN3545
N-Channel Depletion-Mode
Vertical DMOS FET Features
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►► General Description High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage These depletion-mode (normally-on) transistors utilize an
advanced vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown. Applications
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