Datasheet ON Semiconductor SBRS8120T3G — 数据表

MBRS120T3G,
SBRS8120T3G
Preferred Device Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system. www.onsemi.com SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE, 20 VOLTS Features •
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• Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, TJ = 25°C) …