FDN335N FDN335N
N-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description Features This N-Channel 2.5V specified MOSFET is produced
using ON Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance. • Applications 1.7 A, 20 V. RDS(ON) = 0.07 Ω @ VGS = 4.5 V
RDS(ON) = 0.100 Ω @ VGS = 2.5 V. • Low gate charge (3.5nC typical). • High performance trench technology for extremely
low RDS(ON). • High power and current handling capability. • DC/DC converter
• Load switch D D S
TM SuperSOT -3 G G Absolute Maximum Ratings
Symbol S TA = 25°C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage V ID Drain Current ±8
1.7 -Continuous (Note 1a) -Pulsed
PD Power Dissipation for Single Operation TJ, Tstg A 8
(Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Junction Temperature Range W -55 to +150 °C °C/W
°C/W Thermal Characteristics
RθJA
RθJC Thermal Resistance, Junction-to-Ambient (Note 1a) 250 Thermal Resistance, Junction-to-Case (Note 1) 75 Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity 335 FDN335N 7’’ 8mm 3000 units 1999 Semiconductor Components Industries, LLC.
October-2017, Rev. 3 Publication Order Number:
FDN335N/D Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS
∆TJ …