Datasheet FDN335N (ON Semiconductor)

FDN335N FDN335N N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features
This N-Channel 2.5V specified MOSFET is produced • 1.7 A, 20 V. R = 0.07 Ω @ V = 4.5 V DS(ON) GS using ON Semiconductor's advanced PowerTrench R = 0.100 Ω @ V = 2.5 V. process that has been especially tailored to minimize the DS(ON) GS on-state resistance and yet maintain low gate charge for • Low gate charge (3.5nC typical). superior switching performance. • High performance trench technology for extremely low R . DS(ON)
Applications
• High power and current handling capability. • DC/DC converter • Load switch
D
D
S
G S
TM G SuperSOT -3 Absolute Maximum Ratings
T = 25°C unless otherwise noted A
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±8 V ID Drain Current - Continuous (Note 1a) 1.7 A - Pulsed 8 PD Power Dissipation for Single Operation (Note 1a) 0.5 W (Note 1b) 0.46 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W
Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity
335 FDN335N 7’’ 8mm 3000 units 1999 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 3 FDN335N/D