TK65S04N1L
MOSFETs Silicon N-channel MOS (U-MOS-H) TK65S04N1L
1. Applications
• Automotive • Motor Drivers • Switching Voltage Regulators 2. Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1: Gate
2: Drain (heatsink)
3: Source DPAK+ Start of commercial production
©2015-2018
Toshiba Electronic Devices & Storage Corporation 1 2014-04
2018-05-09
Rev.6.0 TK65S04N1L
unless otherwise specified)
4. Absolute Maximum Ratings (Note) (Ta = 25
25
Characteristics Symbol Rating Unit
V Drain-source voltage VDSS 40 Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 65 Drain current (pulsed) (Note 1) IDP 130 (Note 2) PD 107 W (Note 3) EAS 104 mJ IAS 65 A Channel temperature (Note 4) Tch 175 Storage temperature (Note 4) Tstg -55 to 175 Power dissipation (Tc = 25) Single-pulse avalanche energy
Single-pulse avalanche current Note: A Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). 5. Thermal Characteristics …
