Datasheet TK65S04N1L (Toshiba)

TK65S04N1L MOSFETs Silicon N-channel MOS (U-MOS-H) TK65S04N1L 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial production 2014-04 ©2015-2018 1 2018-05-09 Toshiba Electronic Devices & Storage Corporation Rev.6.0