Datasheet TK65S04N1L (Toshiba) - 3

TK65S04N1L 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V   ±10 µA Drain cut-off current IDSS VDS = 40 V, VGS = 0 V   10 Drain-source breakdown voltage V(BR)DSS ID = 10 mA, VGS = 0 V 40   V Drain-source breakdown voltage V(BR)DSX ID = 10 mA, VGS = -20 V 20   Gate threshold voltage Vth VDS = 10 V, ID = 0.3 mA 1.5  2.5 Drain-source on-resistance RDS(ON) VGS = 4.5 V, ID = 32.5 A  4.9 7.8 mΩ VGS = 10 V, ID = 32.5 A  3.3 4.3 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Input capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz  2550  pF Reverse transfer capacitance Crss  130  Output capacitance Coss  1430  Switching time (rise time) tr See Figure 6.2.1.  8  ns Switching time (turn-on time) ton  20  Switching time (fall time) tf  17  Switching time (turn-off time) toff  51  VDD ≈ 20 V VGS = 0 V/10 V ID = 32.5 A RL = 0.62 Ω RG = 4.7 Ω Duty ≤ 1 %, tw = 10 µs Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Total gate charge (gate-source plus Qg VDD ≈ 32 V, VGS = 10 V, ID = 65 A  39  nC gate-drain) Gate-source charge 1 Qgs1  9  Gate-drain charge Qgd  7  6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse drain current (DC) (Note 5) IDR    65 A Reverse drain current (pulsed) (Note 5) IDRP   130 Diode forward voltage VDSF IDR = 65 A, VGS = 0 V   -1.2 V Reverse recovery time trr IDR = 65 A, VGS = 0 V  63  ns Reverse recovery charge Q -dIDR/dt = 50 A/µs rr  47  nC Note 5: Ensure that the channel temperature does not exceed 175. ©2015-2018 3 2018-05-09 Toshiba Electronic Devices & Storage Corporation Rev.6.0