Datasheet TK65S04N1L (Toshiba) - 2

TK65S04N1L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 40 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 65 A Drain current (pulsed) (Note 1) IDP 130 Power dissipation (Tc = 25) (Note 2) PD 107 W Single-pulse avalanche energy (Note 3) EAS 104 mJ Single-pulse avalanche current IAS 65 A Channel temperature (Note 4) Tch 175 Storage temperature (Note 4) Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance Rth(ch-c) 1.4 /W Note 1: Ensure that the channel temperature does not exceed 175. Note 2: The power dissipation value is calculated based on the channel-to-case thermal resistance. However, the safe operating area is not only limited to thermal limits but also the current concentration phenomenon. This device should not be used under conditions outside its safe operating area shown herein. Note 3: VDD = 32 V, Tch = 25 (initial), L = 19 µH, RG = 1 Ω, IAS = 65 A, VG = +15/0 V Note 4: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. ©2015-2018 2 2018-05-09 Toshiba Electronic Devices & Storage Corporation Rev.6.0