IGLD60R190D1 IGLD60R190D1
600V CoolGaN™ enhancement-mode Power Transistor
Features Enhancement mode transistor – Normally OFF switch Ultra fast switching No reverse-recovery charge G Capable of reverse conduction SK
S Low gate charge, low output charge S
D Superior commutation ruggedness D
D Qualified for industrial applications according to JEDEC D
1 Standards (JESD47 and JESD22) S
S
SK
G Benefits 8 Gate 8 Drain 1,2,3,4 Kelvin Source 7 Source 5,6 Improves system efficiency Improves power density Enables higher operating frequency System cost reduction savings Reduces EMI D Applications
SMPS and high density chargers based on the half-bridge topology
(half-bridge topologies for hard and soft switching such as Totem pole PFC,
high frequency LLC and flyback).
For other applications: review CoolGaN™ reliability white paper and contact
Infineon regional support
Table 1 S Key Performance Parameters at Tj = 25 °C Parameter
VDS,max
RDS(on),max
QG,typ
ID,pulse
Qoss @ 400 V
Qrr Table 2 G
SK Value …
