Datasheet Infineon IRLR024N — 数据表

PD-95081A IRLR024NPbF
IRLU024NPbF
HEXFET® Power MOSFET
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l Logic-Level Gate Drive
Surface Mount (IRLR024N)
Straight Lead (IRLU024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free D VDSS = 55V
RDS(on) = 0.065Ω G ID = 17A S Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient device for use in
a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or …