Datasheet Infineon 6ED2230S12T — 数据表

6ED2230S12T
1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP Features
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• Infineon Thin-Film-SOI technology
Fully operational to +1200 V
Integrated Ultra‐fast Bootstrap Diode
Floating channel designed for bootstrap operation
Output source/sink current capability +0.35 A/‐0.65 A • Tolerant to negative transient voltage up to -100 V
(Pulse width is up 700 ns) given by SOI-technology
Undervoltage lockout for both channels
3.3 V, 5 V, and 15 V input logic compatible
Over current protection with ±5% ITRIP threshold
Fault reporting, automatic Fault clear and
Enable function on the same pin (RFE)
Matched propagation delay for all channels
Integrated 460 ns deadtime protection
Shoot-through (cross-conduction) protection •
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