Datasheet Analog Devices HMC8411LP2FETR — 数据表

Low Noise Amplifier,
0.01 GHz to 10 GHz
HMC8411LP2FE Data Sheet
FEATURES FUNCTIONAL BLOCK DIAGRAM Low noise figure: 1.7 dB typical
Single positive supply (self biased)
High gain: 15.5 dB typical
High OIP3: 34 dBm typical
6-lead, 2 mm × 2 mm LFCSP HMC8411LP2FE
TOP VIEW
(Not to Scale) RFIN 2
NC 3 APPLICATIONS 6 GND
5 RFOUT/VDD
4 NC 15859-001 RBIAS 1 Figure 1. Test instrumentation
Military communications GENERAL DESCRIPTION
The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), pseudomorphic high
electron mobility transistor (pHEMT), low noise wideband
amplifier that operates from 0.01 GHz to 10 GHz. The HMC8411LP2FE also features inputs and outputs that are
internally matched to 50 Ω, making the device ideal for surfacemounted technology (SMT)-based, high capacity microwave
radio applications. The HMC8411LP2FE provides a typical gain of 15.5 dB, a
1.7 dB typical noise figure, and a typical output third-order
intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V
supply voltage. The saturated output power (PSAT) of 19.5 dBm …