Datasheet Analog Devices HMC7950LS6TR — 数据表

2 GHz to 28 GHz, GaAs
pHEMT MMIC Low Noise Amplifier
HMC7950 Data Sheet 11 NIC GND RFOUT GND NIC 15 14 13 12 HMC7950 VDD 3 9 NIC PACKAGE
BASE
GND 15412-001 NIC GND RFIN VGG2 8 NIC 7 10 6 2 5 NIC 4 Test instrumentation
Military and space 1 GND APPLICATIONS NIC NIC FUNCTIONAL BLOCK DIAGRAM Output power for 1 dB compression (P1dB): 16 dBm typical
Saturated output power (PSAT): 19.5 dBm typical
Gain: 15 dB typical
Noise figure: 2.0 dB typical
Output third-order intercept (IP3): 26 dBm typical
Supply voltage: 5 V at 64 mA
50 Ω matched input/output 16 FEATURES Figure 1. GENERAL DESCRIPTION
The HMC7950 is a gallium arsenide (GaAs), pseudomorphic
high electron mobility transistor (pHEMT), monolithic microwave
integrated circuit (MMIC). The HMC7950 is a wideband low
noise amplifier that operates between 2 GHz and 28 GHz. The
amplifier typically provides 15 dB of gain, 2.0 dB of noise figure,
26 dBm of output IP3, and 16 dBm of output power for 1 dB gain
compression, requiring 64 mA from a 5 V supply. The HMC7950 Rev. A is self biased with only a single positive supply needed to
achieve a drain current, IDD, of 64 mA. The HMC7950 also has a
gain control option, VGG2. The HMC7950 amplifier input/outputs
are internally matched to 50 Ω and dc blocked. It comes in a
6 mm × 6 mm, 16-terminal LCC SMT ceramic package that is …