Datasheet Analog Devices HMC902LP3ETR — 数据表

FUNCTIONAL BLOCK DIAGRAM
VDD1 VDD2 NIC 15 14 13 RFIN 3 10 GND 4 9 8 11 NIC NIC 2 7 NIC VGG2 12 NIC RFOUT
GND PACKAGE
BASE GND 14524-001 NIC
1 6 Point to point radios
Point to multi point radios
Military and space
Test instrumentation NIC VGG1 APPLICATIONS HMC902LP3E 16 Low noise figure: 1.8 dB typical
High gain: 19.5 dB
High P1dB output power: 16 dBm typical
Single supply: 3.5 V at 80 mA
Output IP3: 28 dBm
50 Ω matched input/output
Self biased with optional bias control for quiescent drain
control (IDQ) reduction.
3 mm × 3 mm, 16-lead LFCSP: 9 mm² 5 FEATURES NIC Data Sheet 5 GHz to 11 GHz
GaAs, pHEMT, MMIC, Low Noise Amplifier
HMC902LP3E Figure 1. GENERAL DESCRIPTION
The HMC902LP3E is a gallium arsenide (GaAs), pseudomorphic
high electron mobility transistor (pHEMT), monolithic microwave
integrated circuit (MMIC) low noise amplifier (LNA), which is
self biased with optional bias control for IDQ reduction. The
HMC902LP3E is housed in a leadless 3 mm × 3 mm plastic surface …