Datasheet Analog Devices HMC-ALH376-SX — 数据表

HMC-ALH376
v02.0209 LOW NOISE AMPLIFIERS -CHIP 1 GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 35 -45 GHz Typical Applications Features This HMC-ALH376 is ideal for: Noise Figure: 2 dB • Point-to-Point Radios Gain: 16 dB @ 40 GHz • Point-to-Multi-Point Radios P1dB Output Power: +6 dBm • Test Equipment & Sensors Supply Voltage: +4V @ 87 mA • Military & Space Die Size: 2.7 x 1.44 x 0.1 mm Functional Diagram General Description
The HMC-ALH376 is a GaAs MMIC HEMT three
stages, self-biased Low Noise Amplifier die
which operates between 35 and 45 GHz. The
amplifier provides 16 dB of gain, a 2 dB noise
figure and +6 dBm of output power at 1 dB gain
compression while requiring only 87 mA from a single
+4V supply. This self-biased LNA is ideal for integration into hybrid assemblies or Multi-Chip-Modules
(MCMs) due to its small size (3.9 mm2). Electrical Specifi cations*, TA = +25° C, Vdd= +4V
Parameter Min. Frequency Range
Gain Typ. Max. Min. 35 -40
15 Typ. Max. 40 -45 16 10
3 GHz 12 Noise Figure 2 2.2 Input Return Loss 10 17 Units dB
3 dB
dB Output Return Loss 16 18 dB Output Power for 1 dB Compression 6 6 dBm Supply Current (Idd) (Vdd= +4V) 87 87 mA *Unless otherwise indicated, all measurements are from probed die 1 -168 For price,
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