Datasheet Analog Devices HMC591-SX — 数据表

HMC591
v02.0109 LINEAR & POWER AMPLIFIERS -CHIP 3 GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6 -10 GHz Typical Applications Features The HMC591 is ideal for use as a power amplifier for: Saturated Output Power: +34 dBm @ 24% PAE • Point-to-Point Radios Output IP3: +43 dBm • Point-to-Multi-Point Radios Gain: 23 dB • Test Equipment & Sensors DC Supply: +7.0 V @ 1340 mA • Military End-Use 50 Ohm Matched Input/Output • Space 2.47 mm x 2.49 mm x 0.1 mm Functional Diagram General Description
The HMC591 is a high dynamic range GaAs PHEMT
MMIC 2 Watt Power Amplifier which operates from
6 to 10 GHz. This amplifier die provides 23 dB of
gain and +34 dBm of saturated power, at 24% PAE
from a +7.0V supply. Output IP3 is +43 dBm typical.
The RF I/Os are DC blocked and matched to 50
Ohms for ease of integration into Multi-Chip-Modules
(MCMs). All data is taken with the chip in a 50 ohm test
fixture connected via 0.025mm (1 mil) diameter wire
bonds of length 0.31mm (12 mils). For applications
which require optimum OIP3, Idd should be set for 940
mA, to yield +43 dBm OIP3. For applications which
require optimum output P1dB, Idd should be set for
1340 mA, to yield +33 dBm Output P1dB. Electrical Specifi cations, TA = +25° C, Vdd = +7V, Idd = 1340 mA[1]
Parameter Min. Frequency Range Typ. Max. Min. 6 -10 Gain 20 Units
GHz 23 dB 0.05 dB/ °C Input Return Loss 12 14 dB Output Return Loss 11 10 dB 33.5 dBm 34 dBm 43 43 dBm 1340 1340 mA Output Power for 1 dB
Compression (P1dB) 30 Saturated Output Power (Psat)
Output Third Order Intercept (IP3)[2] Supply Current (Idd) 33
33.5 20 Max. 0.05 Gain Variation Over Temperature 23 Typ.
6.8 -9 30.5 [1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical. …