IRFZ24
www.vishay.com Vishay Siliconix Power MOSFET
FEATURES D • Dynamic dV/dt rating TO-220AB • 175 °C operating temperature
• Fast switching
G • Ease of paralleling
• Simple drive requirements G D S • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912 S
N-Channel MOSFET DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness. PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) 60
VGS = 10 V 0.10 Qg max. (nC) 25 Qgs (nC) 5.8 Qgd (nC)
Configuration The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry. 11
Single ORDERING INFORMATION
Package TO-220AB Lead (Pb)-free IRFZ24PbF Lead (Pb)-free and halogen-free IRFZ24PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT Drain-source voltage VDS 60 Gate-source voltage VGS ± 20 VGS at 10 V Continuous drain current TC = 25 °C …
