Datasheet IRFZ24 (Vishay)
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 7 / 1 — IRFZ24. Power MOSFET. FEATURES. TO-220AB. DESCRIPTION. PRODUCT SUMMARY. … |
| 文件格式/大小 | PDF / 204 Kb |
| 文件语言 | 英语 |
IRFZ24. Power MOSFET. FEATURES. TO-220AB. DESCRIPTION. PRODUCT SUMMARY. ORDERING INFORMATION. ABSOLUTE MAXIMUM RATINGS
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文件文字版本
IRFZ24
www.vishay.com Vishay Siliconix
Power MOSFET FEATURES
D • Dynamic dV/dt rating
TO-220AB
• 175 °C operating temperature • Fast switching G • Ease of paralleling • Simple drive requirements S • Material categorization: for definitions of compliance D G S please see www.vishay.com/doc?99912 N-Channel MOSFET
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
PRODUCT SUMMARY
designer with the best combination of fast switching, V ruggedized device design, low on-resistance and DS (V) 60 cost-effectiveness. RDS(on) (Ω) VGS = 10 V 0.10 Q The TO-220AB package is universally preferred for all g max. (nC) 25 commercial-industrial applications at power dissipation Qgs (nC) 5.8 levels to approximately 50 W. The low thermal resistance Qgd (nC) 11 and low package cost of the TO-220AB contribute to its Configuration Single wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB Lead (Pb)-free IRFZ24PbF Lead (Pb)-free and halogen-free IRFZ24PbF-BE3
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 60 V Gate-source voltage VGS ± 20 TC = 25 °C 17 Continuous drain current VGS at 10 V ID TC = 100 °C 12 A Pulsed drain current a IDM 68 Linear derating factor 0.40 W/°C Single pulse avalanche energy b EAS 100 mJ Maximum power dissipation TC = 25 °C PD 60 W Peak diode recovery dV/dt c dV/dt 4.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +175 °C Soldering recommendations (peak temperature) d For 10 s 300 10 lbf · in Mounting torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 403 μH, Rg = 25 Ω, IAS = 17 A (see fig. 12) c. ISD ≤ 17 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case S21-1262-Rev. D, 27-Dec-2021
1
Document Number: 91406 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Power MOSFET FEATURES
D • Dynamic dV/dt rating
TO-220AB
• 175 °C operating temperature • Fast switching G • Ease of paralleling • Simple drive requirements S • Material categorization: for definitions of compliance D G S please see www.vishay.com/doc?99912 N-Channel MOSFET
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
PRODUCT SUMMARY
designer with the best combination of fast switching, V ruggedized device design, low on-resistance and DS (V) 60 cost-effectiveness. RDS(on) (Ω) VGS = 10 V 0.10 Q The TO-220AB package is universally preferred for all g max. (nC) 25 commercial-industrial applications at power dissipation Qgs (nC) 5.8 levels to approximately 50 W. The low thermal resistance Qgd (nC) 11 and low package cost of the TO-220AB contribute to its Configuration Single wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB Lead (Pb)-free IRFZ24PbF Lead (Pb)-free and halogen-free IRFZ24PbF-BE3
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 60 V Gate-source voltage VGS ± 20 TC = 25 °C 17 Continuous drain current VGS at 10 V ID TC = 100 °C 12 A Pulsed drain current a IDM 68 Linear derating factor 0.40 W/°C Single pulse avalanche energy b EAS 100 mJ Maximum power dissipation TC = 25 °C PD 60 W Peak diode recovery dV/dt c dV/dt 4.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +175 °C Soldering recommendations (peak temperature) d For 10 s 300 10 lbf · in Mounting torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 403 μH, Rg = 25 Ω, IAS = 17 A (see fig. 12) c. ISD ≤ 17 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case S21-1262-Rev. D, 27-Dec-2021
1
Document Number: 91406 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000