Datasheet STMicroelectronics STB11NM60T4 — 数据表

STB11NM60T4, STP11NM60
Datasheet N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh™ II Power MOSFETs in D²PAK and
TO-220 packages Features
TAB TAB Order codes
STB11NM60T4 3 1 D2PAK TO-220 1 2 3 STP11NM60 •
•
• VDSS
(@ TJmax)
650 V RDS(on) max. ID 0.45 Ω 11 A Package
D²PAK
TO-220 100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance D(2, TAB) Applications
• Switching applications G(1) Description
S(3)
AM01475v1_noZen These devices are N-channel Power MOSFETs developed using the second
generation of MDmesh™ technology. These revolutionary Power MOSFETs
associate a vertical structure to the company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. They are therefore suitable for the most
demanding high-efficiency converters. Product status link
STB11NM60T4
STP11NM60
Product summary …