Datasheet 1N5817, 1N5818, 1N5819 (ON Semiconductor)
| 制造商 | ON Semiconductor |
| 描述 | Axial Lead Rectifiers |
| 页数 / 页 | 7 / 1 — 1N5817 and 1N5819 are Preferred Devices. http://onsemi.com. Features. … |
| 文件格式/大小 | PDF / 77 Kb |
| 文件语言 | 英语 |
1N5817 and 1N5819 are Preferred Devices. http://onsemi.com. Features. SCHOTTKY BARRIER. RECTIFIERS. 1.0 AMPERE. 20, 30 and 40 VOLTS
文件文字版本
link to page 6 link to page 6 1N5817, 1N5818, 1N5819
1N5817 and 1N5819 are Preferred Devices
Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and
http://onsemi.com
polarity protection diodes.
Features SCHOTTKY BARRIER
• Extremely Low VF
RECTIFIERS
• Low Stored Charge, Majority Carrier Conduction
1.0 AMPERE
• Low Power Loss/High Efficiency
20, 30 and 40 VOLTS
• These are Pb−Free Devices*
Mechanical Characteristics:
• Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds • Polarity: Cathode Indicated by Polarity Band
AXIAL LEAD
•
CASE 59
ESD Ratings: Machine Model = C (>400 V)
STYLE 1
Human Body Model = 3B (>8000 V)
MARKING DIAGRAM
A 1N581x YYWWG G A =Assembly Location 1N581x =Device Number x= 7, 8, or 9 YY =Year WW =Work Week G =Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques
Preferred
devices are recommended choices for future use Reference Manual, SOLDERRM/D. and best overall value. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
July, 2006 − Rev. 10 1N5817/D
1N5817 and 1N5819 are Preferred Devices
Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and
http://onsemi.com
polarity protection diodes.
Features SCHOTTKY BARRIER
• Extremely Low VF
RECTIFIERS
• Low Stored Charge, Majority Carrier Conduction
1.0 AMPERE
• Low Power Loss/High Efficiency
20, 30 and 40 VOLTS
• These are Pb−Free Devices*
Mechanical Characteristics:
• Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds • Polarity: Cathode Indicated by Polarity Band
AXIAL LEAD
•
CASE 59
ESD Ratings: Machine Model = C (>400 V)
STYLE 1
Human Body Model = 3B (>8000 V)
MARKING DIAGRAM
A 1N581x YYWWG G A =Assembly Location 1N581x =Device Number x= 7, 8, or 9 YY =Year WW =Work Week G =Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques
Preferred
devices are recommended choices for future use Reference Manual, SOLDERRM/D. and best overall value. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
July, 2006 − Rev. 10 1N5817/D