Datasheet ADA4091-2, ADA4091-4 (Analog Devices) - 5
| 制造商 | Analog Devices |
| 描述 | Precision Micropower, OVP, RRIO Operational Amplifier |
| 页数 / 页 | 20 / 5 — Data Sheet. ADA4091-2/ADA4091-4. Table 4. Parameter. Symbol. Test … |
| 修订版 | H |
| 文件格式/大小 | PDF / 556 Kb |
| 文件语言 | 英语 |
Data Sheet. ADA4091-2/ADA4091-4. Table 4. Parameter. Symbol. Test Conditions/Comments. Min. Typ. Max. Unit
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Data Sheet ADA4091-2/ADA4091-4
VSY = ±15.0 V, VCM = 0.0 V, VO = 0.0 V, TA = 25°C, unless otherwise noted.
Table 4. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS −250 −35 +250 µV ADA4091-4 LFCSP package −400 −40 +400 µV −40°C ≤ TA ≤ +125°C −600 +600 µV Offset Voltage Drift ∆VOS/∆T 3.0 µV/°C Input Bias Current IB −60 −50 nA −40°C ≤ TA ≤ +85°C −80 +80 nA −40°C ≤ TA ≤ +125°C −510 +510 nA Input Offset Current IOS −3 0.5 +3 nA −40°C ≤ TA ≤ +85°C −10 +10 nA −40°C ≤ TA ≤ +125°C −140 +140 nA Input Voltage Range −15 +15 V Common-Mode Rejection Ratio CMRR VCM = −14.85 V to +14.85 V 104 121 dB −40°C ≤ TA ≤ +125°C 95 dB Large Signal Voltage Gain AVO RL = 100 kΩ, VO = ±14.7 V 116 119 dB −40°C ≤ TA ≤ +125°C 108 dB RL = 10 kΩ, VO = ±14.7 V 102 104 dB −40°C ≤ TA ≤ +125°C 93 dB OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 100 kΩ to GND 14.975 14.980 V −40°C ≤ TA ≤ +125°C 14.950 V RL = 10 kΩ to GND 14.900 14.920 V −40°C ≤ TA ≤ +125°C 14.800 V Output Voltage Low VOL RL = 100 kΩ to GND −14.996 −14.990 V −40°C ≤ TA ≤ +125°C −14.985 V RL = 10 kΩ to GND −14.975 −14.950 V −40°C ≤ TA ≤ +125°C −14.940 V Short-Circuit Limit ISC Source/sink ±20 mA Closed-Loop Impedance ZOUT f = 1 MHz, AV = 1 71 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VSY = 2.7 V to 36 V 108 126 dB −40°C ≤ TA ≤ +125°C 100 dB Supply Current per Amplifier ISY IO = 0 mA 200 250 µA −40°C ≤ TA ≤ +125°C 350 µA DYNAMIC PERFORMANCE Slew Rate SR RL = 100 kΩ, CL = 30 pF 0.46 V/µs Settling Time tS To 0.01% 22 µs Gain Bandwidth Product GBP 1.27 MHz Phase Margin ΦM 72 Degrees Channel Separation CS f = 1 kHz 100 dB NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.8 µV p-p Voltage Noise Density en f = 1 kHz 25 nV/√Hz Rev. H | Page 5 of 20 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION INPUT STAGE OUTPUT STAGE INPUT OVERVOLTAGE PROTECTION OUTLINE DIMENSIONS ORDERING GUIDE
VSY = ±15.0 V, VCM = 0.0 V, VO = 0.0 V, TA = 25°C, unless otherwise noted.
Table 4. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS −250 −35 +250 µV ADA4091-4 LFCSP package −400 −40 +400 µV −40°C ≤ TA ≤ +125°C −600 +600 µV Offset Voltage Drift ∆VOS/∆T 3.0 µV/°C Input Bias Current IB −60 −50 nA −40°C ≤ TA ≤ +85°C −80 +80 nA −40°C ≤ TA ≤ +125°C −510 +510 nA Input Offset Current IOS −3 0.5 +3 nA −40°C ≤ TA ≤ +85°C −10 +10 nA −40°C ≤ TA ≤ +125°C −140 +140 nA Input Voltage Range −15 +15 V Common-Mode Rejection Ratio CMRR VCM = −14.85 V to +14.85 V 104 121 dB −40°C ≤ TA ≤ +125°C 95 dB Large Signal Voltage Gain AVO RL = 100 kΩ, VO = ±14.7 V 116 119 dB −40°C ≤ TA ≤ +125°C 108 dB RL = 10 kΩ, VO = ±14.7 V 102 104 dB −40°C ≤ TA ≤ +125°C 93 dB OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 100 kΩ to GND 14.975 14.980 V −40°C ≤ TA ≤ +125°C 14.950 V RL = 10 kΩ to GND 14.900 14.920 V −40°C ≤ TA ≤ +125°C 14.800 V Output Voltage Low VOL RL = 100 kΩ to GND −14.996 −14.990 V −40°C ≤ TA ≤ +125°C −14.985 V RL = 10 kΩ to GND −14.975 −14.950 V −40°C ≤ TA ≤ +125°C −14.940 V Short-Circuit Limit ISC Source/sink ±20 mA Closed-Loop Impedance ZOUT f = 1 MHz, AV = 1 71 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VSY = 2.7 V to 36 V 108 126 dB −40°C ≤ TA ≤ +125°C 100 dB Supply Current per Amplifier ISY IO = 0 mA 200 250 µA −40°C ≤ TA ≤ +125°C 350 µA DYNAMIC PERFORMANCE Slew Rate SR RL = 100 kΩ, CL = 30 pF 0.46 V/µs Settling Time tS To 0.01% 22 µs Gain Bandwidth Product GBP 1.27 MHz Phase Margin ΦM 72 Degrees Channel Separation CS f = 1 kHz 100 dB NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 0.8 µV p-p Voltage Noise Density en f = 1 kHz 25 nV/√Hz Rev. H | Page 5 of 20 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION INPUT STAGE OUTPUT STAGE INPUT OVERVOLTAGE PROTECTION OUTLINE DIMENSIONS ORDERING GUIDE