Datasheet LTC2373-16 (Analog Devices) - 6

LTC2373-16
r eFerence buFFer characTerisTics The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VREFBUF Reference Buffer Output Voltage VREFIN = 2.048V l 4.088 4.096 4.104 V REFBUF Input Voltage Range (REFBUF Overdriven) (Notes 5, 9) l 2.5 5 V REFBUF Output Impedance VREFIN = 0V (Buffer Disabled) 13 kΩ IREFBUF REFBUF Load Current VREFBUF = 5V (REFBUF Overdriven) (Notes 9, 12) l 1 1.2 mA VREFBUF = 5V, Nap Mode (REFBUF Overdriven) (Note 9) 0.38 mA
Digi Tal inpuTs anD DigiTal ouTpuTs The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VIH High Level Input Voltage l 0.8 • OVDD V VIL Low Level Input Voltage l 0.2 • OVDD V IIN Digital Input Current VIN = 0V to OVDD l –10 10 μA CIN Digital Input Capacitance 5 pF VOH High Level Output Voltage IO = –500µA l OVDD – 0.2 V VOL Low Level Output Voltage IO = 500µA l 0.2 V IOZ Hi-Z Output Leakage Current VOUT = 0V to OVDD l –10 10 µA ISOURCE Output Source Current VOUT = 0V –10 mA ISINK Output Sink Current VOUT = OVDD 10 mA
p ower requireMenTs The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VDD Supply Voltage l 4.75 5 5.25 V OVDD Supply Voltage l 1.71 5.25 V IVDD Supply Current 1Msps Sample Rate l 8 11 mA IOVDD Supply Current 1Msps Sample Rate (CL = 20pF) l 0.7 mA INAP Nap Mode Current Conversion Done (IVDD + IOVDD) l 1.25 1.5 mA ISLEEP Sleep Mode Current Sleep Mode (IVDD + IOVDD) l 60 120 μA PD Power Dissipation 1Msps Sample Rate 40 55 mW Nap Mode Conversion Done (IVDD + IOVDD) 6.25 7.5 mW Sleep Mode Sleep Mode (IVDD + IOVDD) 300 600 µW
a Dc TiMing characTerisTics The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
fSMPL Maximum Sampling Frequency l 1 Msps tCONV Conversion Time l 460 527 ns tACQ Acquisition Time tACQ = tCYC – tCONV – tBUSYLH (Note 6) l 460 ns tCYC Time Between Conversions l 1 µs tCNVH CNV High Time l 20 ns tCNVL Minimum Low Time for CNV (Note 13) l 20 ns tBUSYLH CNV↑ to BUSY↑ Delay CL = 20pF l 13 ns tRESETH RESET Pulse Width l 200 ns tQUIET SCK, SDI and RDL Quiet Time from CNV↑ (Note 6) l 20 ns 237316fa 6 For more information www.linear.com/LTC2373-16 Document Outline Features Applications Description Typical Application Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Converter Characteristics Dynamic Accuracy Internal Reference Characteristics Reference Buffer Characteristics Digital Inputs and Digital Outputs Power Requirements ADC Timing Characteristics Typical Performance Characteristics Pin Functions Functional Block Diagram Timing Diagram