Known Good DieAD8608-KGDSPECIFICATIONS 5 V ELECTRICAL SPECIFICATIONS VS = 5 V, VCM = VS/2, TA = 25°C, unless otherwise noted. Table 1. ParameterSymbolConditionsMinTypMaxUnit INPUT CHARACTERISTICS Offset Voltage VOS VS = 3.5 V, VCM = 2.7 V 20 75 µV VS = 5 V, VCM = 0 V to 5 V 80 300 µV −40°C < TA < +125°C 750 µV Input Bias Current IB 0.2 1 pA −40°C < TA < +125°C 300 pA Input Offset Current IOS 0.1 0.5 pA −40°C < TA < +125°C 75 pA Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 5 V 85 100 dB −40°C < TA < +125°C 75 90 dB Large Signal Voltage Gain AVO RL = 2 kΩ, VO = 0.5 V to 4.5 V 300 1000 V/mV Offset Voltage Drift ΔVOS/ΔT −40°C < TA < +125°C 1.5 6.0 µV/°C INPUT CAPACITANCE Common-Mode Input Capacitance CCOM 8.8 pF Differential Input Capacitance CDIFF 2.6 pF OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 1 mA 4.96 4.98 V IL = 10 mA 4.7 4.79 V −40°C < TA < +125°C 4.6 V Output Voltage Low VOL IL = 1 mA 20 40 mV IL= 10 mA 170 210 mV −40°C < TA < +125°C 290 mV Output Current IOUT ±80 mA Closed-Loop Output Impedance ZOUT f = 1 MHz, AV = 1 1 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 77 92 dB −40°C < TA < +125°C 70 90 dB Supply Current/Amplifier ISY IOUT = 0 mA 1 1.2 mA −40°C < TA < +125°C 1.4 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ, CL = 16 pF 5 V/µs Settling Time tS To 0.01%, 0 V to 2 V step, AV = 1 <1 µs Unity Gain Bandwidth Product GBP 10 MHz Phase Margin ΦM 65 Degrees NOISE PERFORMANCE Peak-to-Peak Noise en p-p f = 0.1 Hz to 10 Hz 2.3 3.5 µV p-p Voltage Noise Density en f = 1 kHz 8 12 nV/√Hz en f = 10 kHz 6.5 nV/√Hz Current Noise Density in f = 1 kHz 0.01 pA/√Hz Rev. 0 | Page 3 of 7 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 5 V ELECTRICAL SPECIFICATIONS 2.7 V ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS OUTLINE DIMENSIONS DIE SPECIFICATIONS AND ASSEMBLY RECOMMENDATIONS ORDERING GUIDE