Datasheet RH111 (Analog Devices) - 2
| 制造商 | Analog Devices |
| 描述 | Voltage Comparator |
| 页数 / 页 | 4 / 2 — TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 9). TA = 25. … |
| 文件格式/大小 | PDF / 60 Kb |
| 文件语言 | 英语 |
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 9). TA = 25. SUB-. – 55. 125. SYMBOL PARAMETER. CONDITIONS. NOTES. MIN. TYP. MAX
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RH111
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 9) TA = 25
°
C SUB- – 55
°
C
≤
TA
≤
125
°
C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS
VOS Input Offset Voltage RS ≤ 50k 3,4 3.0 1 4.0 2,3 mV IOS Input Offset Current 3,4 10 1 20 2,3 nA IB Input Bias Current 3 100 1 150 2,3 nA AVOL Large-Signal Voltage Gain 7 40 4 V/mV Input Voltage Range VS = ±15V, VPIN7 ≤ 5V – 14.5 13.0 1 – 14.5 13.0 2,3 V tD Response Time 5 200 ns V – OL Output Saturation Voltage VIN = 5mV, IOUT = 50mA, V + ≥ 4.5V, V – = 0V 8 1.5 1 V V – IN = 6mV, IOUT = 8mA 8 0.4 1 0.4 2,3 V Output Leakage Current V + IN = 5mV, ISTROBE = 3mA, 10 1 500 2,3 nA VOUT = 20V, VGND = –15V Positive Supply Current 8 6.0 1 mA Negative Supply Current 8 5.0 1 mA Strobe Current Minimum to Ensure Output 6 3 mA Transistor Is Turned Off Input Capacitance 6 pF
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 9) 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage RS ≤ 50k 3.0 3.0 3.0 3.0 4.0 mV IOS Input Offset Current 10 10 10 25 50 nA IB Input Bias Current 100 150 200 300 400 nA AVOL Large-Signal Voltage Gain 7 40 40 40 40 25 V/mV Input Voltage Range VS = ±15V, VPIN7 ≤ 5V –14.5 13.0 –14.5 13.0 –14.5 13.0 –14.5 13.0 – 14.5 13.0 V V – OL Output Saturation Voltage VIN = 5mV, IOUT = 50mA V + ≥ 4.5V, V– = 0V 8 1.5 1.5 1.5 1.5 1.5 V V – IN = 6mV, IOUT = 8mA 8 0.4 0.4 0.4 0.4 0.4 V Output Leakage Current V + IN = 5mV, ISTROBE = 3mA 10 10 100 100 100 nA VOUT = 20V, VGND = –15V Positive Supply Current 8 6.0 6.0 6.0 6.0 6.0 mA Negative Supply Current 8 5.0 5.0 5.0 5.0 5.0 mA Strobe Current Minimum to Ensure Output 6 3 (Typ) 3(Typ) 3(Typ) 3(Typ) 3(Typ) mA Transaistor Is Turned Off Input Capacitance 6 (Typ) 6(Typ) 6(Typ) 6(Typ) 6(Typ) pF 2
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 9) TA = 25
°
C SUB- – 55
°
C
≤
TA
≤
125
°
C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS
VOS Input Offset Voltage RS ≤ 50k 3,4 3.0 1 4.0 2,3 mV IOS Input Offset Current 3,4 10 1 20 2,3 nA IB Input Bias Current 3 100 1 150 2,3 nA AVOL Large-Signal Voltage Gain 7 40 4 V/mV Input Voltage Range VS = ±15V, VPIN7 ≤ 5V – 14.5 13.0 1 – 14.5 13.0 2,3 V tD Response Time 5 200 ns V – OL Output Saturation Voltage VIN = 5mV, IOUT = 50mA, V + ≥ 4.5V, V – = 0V 8 1.5 1 V V – IN = 6mV, IOUT = 8mA 8 0.4 1 0.4 2,3 V Output Leakage Current V + IN = 5mV, ISTROBE = 3mA, 10 1 500 2,3 nA VOUT = 20V, VGND = –15V Positive Supply Current 8 6.0 1 mA Negative Supply Current 8 5.0 1 mA Strobe Current Minimum to Ensure Output 6 3 mA Transistor Is Turned Off Input Capacitance 6 pF
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 9) 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage RS ≤ 50k 3.0 3.0 3.0 3.0 4.0 mV IOS Input Offset Current 10 10 10 25 50 nA IB Input Bias Current 100 150 200 300 400 nA AVOL Large-Signal Voltage Gain 7 40 40 40 40 25 V/mV Input Voltage Range VS = ±15V, VPIN7 ≤ 5V –14.5 13.0 –14.5 13.0 –14.5 13.0 –14.5 13.0 – 14.5 13.0 V V – OL Output Saturation Voltage VIN = 5mV, IOUT = 50mA V + ≥ 4.5V, V– = 0V 8 1.5 1.5 1.5 1.5 1.5 V V – IN = 6mV, IOUT = 8mA 8 0.4 0.4 0.4 0.4 0.4 V Output Leakage Current V + IN = 5mV, ISTROBE = 3mA 10 10 100 100 100 nA VOUT = 20V, VGND = –15V Positive Supply Current 8 6.0 6.0 6.0 6.0 6.0 mA Negative Supply Current 8 5.0 5.0 5.0 5.0 5.0 mA Strobe Current Minimum to Ensure Output 6 3 (Typ) 3(Typ) 3(Typ) 3(Typ) 3(Typ) mA Transaistor Is Turned Off Input Capacitance 6 (Typ) 6(Typ) 6(Typ) 6(Typ) 6(Typ) pF 2