Datasheet LT1789-1, LT1789-10 (Analog Devices) - 8

LT1789-1/LT1789-10
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the temperature range of 0°C ≤ TA ≤ 70°C. VS = ±15V, RL = 20k, VCM = VREF = 0V, unless otherwise noted. (Note 4) LT1789-1 LT1789-10 SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
PSRR Power Supply Rejection Ratio LT1789-1, VS = ±1.25V to ±16V LT1789-10, VS = ±1.50V to ±16V G = 1 l 92 dB G = 10 l 102 98 dB G = 100, 1000 l 104 104 dB Minimum Supply Voltage l ±1.25 ±1.50 V IS Supply Current l 150 150 µA VO Output Voltage Swing l ±14.25 ±14.25 V SR Slew Rate VOUT = ±10V l 0.010 0.026 V/µs
The
l
denotes the specifications which apply over the temperature range of –40°C ≤ TA ≤ 85°C. VS = ±15V, RL = 20k, VCM = VREF = 0V, unless otherwise noted. (Note 4) LT1789-1 LT1789-10 SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
Gain Error VO = ±10V G = 1 l 0.20 % G = 10 (Note 2) l 0.57 0.25 % G = 100 (Note 2) l 0.57 0.62 % G = 1000 (Note 2) l 0.62 0.67 % Gain Nonlinearity VO = ±10V G = 1 l 30 ppm G = 10 l 20 50 ppm G = 100 l 30 50 ppm G = 1000 l 130 200 ppm G/T Gain vs Temperature G < 1000 (Notes 2, 3) l 5 50 5 50 ppm/°C VOST Total Input Referred Offset Voltage VOST = VOSI + VOSO/G VOSI Input Offset Voltage G = 1000 l 305 340 µV VOSIH Input Offset Voltage Hysteresis (Notes 3, 5) l 8 30 8 30 µV VOSO Output Offset Voltage G = 1 l 1.3 4.2 mV VOSOH Output Offset Voltage Hysteresis (Notes 3, 5) l 50 120 400 1000 µV VOSI/T Input Offset Voltage Drift (RTI) (Note 3) l 0.2 0.7 0.3 0.8 µV/°C VOSO/T Output Offset Voltage Drift (Note 3) l 1.5 5 8 22 µV/°C IOS Input Offset Current l 5 5 nA IOS/T Input Offset Current Drift l 2 2 pA/°C IB Input Bias Current l 50 50 nA IB/T Input Bias Current Drift l 35 35 pA/°C VCM Input Voltage Range G = 1, Other Input Grounded l –14.8 14 –14.8 14 V CMRR Common Mode Rejection Ratio 1k Source Imbalance, VCM = –14.8V to 14V G = 1 l 76 dB G = 10 l 94 89 dB G = 100, 1000 l 98 98 dB 1789fc 8