Datasheet 2N7000, 2N7002, NDS7002A (ON Semiconductor) - 2

2N7000 / 2N7002 / NDS7002A — N-Chan Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Value Symbol Parameter Unit 2N7000 2N7002 NDS7002A
VDSS Drain-to-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS ≤ 1 M 60 V VGSS Gate-Source Voltage - Continuous ±20 V Gate-Source Voltage - Non Repetitive (tp < 50 S) ±40 ID Maximum Drain Current - Continuous 200 115 280 mA Maximum Drain Current - Pulsed 500 800 1500 PD Maximum Power Dissipation Derated above 25°C 400 200 300 mW 3.2 1.6 2.4 mW/°C
nel Enh
TJ, TSTG Operating and Storage Temperature Range -55 to 150 -65 to 150 °C TL Maximum Lead Temperature for Soldering Purposes, 300 °C 1/16-inch from Case for 10 Seconds
a ncement Mode Field Effect T Thermal Characteristics
Values are at TC = 25°C unless otherwise noted
. Value Symbol Parameter Unit 2N7000 2N7002 NDS7002A
R Thermal Resistance, Junction to Ambient JA 312.5 625 417 °C/W
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol Parameter Conditions Type Min. Typ. Max. Unit Off Characteristics ransisto
Drain-Source Breakdown BVDSS V Voltage GS = 0 V, ID = 10 A Al 60 V IDSS Zero Gate Voltage Drain VDS = 48 V, VGS = 0 V 2N7000 1 A Current V 1
r
DS = 48 V, VGS = 0 V, mA TC = 125°C VDS = 60 V, VGS = 0 V 2N7002 1 A NDS7002A VDS = 60 V, VGS = 0 V, 0.5 mA TC = 125°C IGSSF Gate - Body Leakage, VGS = 15 V, VDS = 0 V 2N7000 10 nA Forward VGS = 20 V, VDS = 0 V 2N7002 100 nA NDS7002A IGSSR Gate - Body Leakage, VGS = -15 V, VDS = 0 V 2N7000 -10 nA Reverse VGS = -20 V, VDS = 0 V 2N7002 -100 nA NDS7002A www.onsemi.com 2