Datasheet IRL3705N (Infineon) - 6
| 制造商 | Infineon |
| 描述 | 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
| 页数 / 页 | 9 / 6 — Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b |
| 修订版 | 01_02 |
| 文件格式/大小 | PDF / 455 Kb |
| 文件语言 | 英语 |
Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b
该数据表的模型线
文件文字版本
IRL3705NPbF 800 J) ID 15V m TOP 19A 33A BOTTOM 46A nergy ( 600 L DRIVER VDS anche E RG D.U.T + 400 - VDD IAS A se Aval 10V t 0.01 p 200 ingle Pul
Fig 12a.
Unclamped Inductive Test Circuit S , AS E V DD = 25V 0 A 25 50 75 100 125 150 175 Starting J T , Junction Temperature (°C) V(BR)DSS
Fig 12c.
Maximum Avalanche Energy vs. Drain Current tp IAS
Fig 12b.
Unclamped Inductive Waveforms
Fig 13a.
Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 2018-05-25
Fig 12a.
Unclamped Inductive Test Circuit S , AS E V DD = 25V 0 A 25 50 75 100 125 150 175 Starting J T , Junction Temperature (°C) V(BR)DSS
Fig 12c.
Maximum Avalanche Energy vs. Drain Current tp IAS
Fig 12b.
Unclamped Inductive Waveforms
Fig 13a.
Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 2018-05-25