Datasheet ZTX649 (Diodes) - 2

NPN SILICON PLANAR ZTX649 MEDIUM POWER TRANSISTOR ZTX649 ISSUE 2 – APRIL 94 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). FEATURES * 25 Volt V PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. CEO * 2 Amp continuous current Output Capacitance Cobo 25 50 pF VCB=10V f=1MHz * Low saturation voltage * P Switching Times t tot=1 Watt on 55 ns IC=500mA, VCC=10V I APPLICATIONS C B1=IB2=50mA B toff 300 ns * Motor driver E * DC-DC converters E-Line *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% ABSOLUTE MAXIMUM RATINGS. TO92 Compatible PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 25 V THERMAL CHARACTERISTICS Emitter-Base Voltage VEBO 5 V PARAMETER SYMBOL MAX. UNIT Peak Pulse Current ICM 6 A Thermal Resistance:Junction to Ambient R 175 °C/W Continuous Collector Current I 1 th(j-amb)1 C 2 A Junction to Ambient2 Rth(j-amb)2 † 116 °C/W Power Dissipation at Tamb=25°C Ptot 1 W Junction to Case Rth(j-case) 70 °C/W derate above 25°C 5.7 mW/ °C † Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V(BR)CBO 35 V IC=100µA Breakdown Voltage Collector-Emitter V(BR)CEO 25 V IC=10mA* Breakdown Voltage Emitter-Base V 2.5 200 (BR)EBO 5 V IE=100µA Breakdown Voltage tts) D=1 (D.C.) a W W 2.0 t1 D=t1/tP Collector Cut-Off ICBO 0.1 µA VCB=30V ( °C/ - Case temperature Current 10 µA VCB=30V,Tamb=100°C n oi 1.5 nce ( tP ta Emitter Cut-Off Current IEBO 0.1 µA VEB=4V 100 sipat D=0.5 is Ambient temperat esis 1.0 Collector-Emitter VCE(sat) 0.12 0.3 V IC=1A, IB=100mA* Dr l R Saturation Voltage 0.23 0.5 V I a C=2A, IB=200mA* we D=0.2 0.5 ur rm e e D=0.1 Base-Emitter VBE(sat) 0.9 1.25 V IC=1A, IB=100mA* h T Single Pulse Saturation Voltage ax Po M 0 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Base-Emitter VBE(on) 0.8 1 V IC=1A, VCE=2V* T -Temperature (°C) Pulse Width (seconds) Turn-On Voltage Static Forward Current h
Derating curve Maximum transient thermal impedance
FE 70 200 IC=50mA, VCE=2V* Transfer Ratio 100 200 300 IC=1A, VCE=2V* 75 150 IC=2A, VCE=2V* 15 50 IC=6A, VCE=2V* Transition Frequency fT 150 240 MHz IC=100mA, VCE=5V f=100MHz 3-217 3-216