Datasheet ZTX649 (Diodes) - 3

制造商Diodes
描述Silicon planar medium power transistor datasheet
页数 / 页3 / 3 — TYPICAL CHARACTERISTICS. VCE(sat) v IC. hFE v IC. VBE(sat) v IC. VBE(on) …
文件格式/大小PDF / 68 Kb
文件语言英语

TYPICAL CHARACTERISTICS. VCE(sat) v IC. hFE v IC. VBE(sat) v IC. VBE(on) v IC. Safe Operating Area. Switching Speeds

TYPICAL CHARACTERISTICS VCE(sat) v IC hFE v IC VBE(sat) v IC VBE(on) v IC Safe Operating Area Switching Speeds

该数据表的模型线

文件文字版本

ZTX649
TYPICAL CHARACTERISTICS
220 0.8 200 180 V 160 CE=2V 0.6 olts) IC/IB=10 140 - (V - Gain 120 ) t 0.4 FE sa( h 100 CE 80 V 0.2 60 40 0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps)
VCE(sat) v IC hFE v IC
2.2 1.4 2.0 1.8 1.2 1.6 olts) olts) 1.4 V 1.0 (- - (V 1.2 IC/IB=10 ) E VCE=2V t B a 1.0 0.8 (s V E B 0.8 V 0.6 0.6 0.4 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps)
VBE(sat) v IC VBE(on) v IC
Single Pulse Test at Tamb=25°C 10 td tr IB1=IB2=IC/10 ps) tf ns Am 140 t ( n td ts e 1.0 120 r e ns mi 100 1000 tr Cur t r D.C. 80 800 to 1s tf c 100ms le 60 600 l 10ms itching ts 0.1 1.0ms w 40 400 - Co S C I 20 200 0 0 0.01 0.1 1 0.01 1 10 100 1000 VCE - Collector Voltage (Volts) IC - Collector Current (Amps)
Safe Operating Area Switching Speeds
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