Datasheet STGWA50IH65DF (STMicroelectronics) - 5
| 制造商 | STMicroelectronics |
| 描述 | Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 long leads package |
| 页数 / 页 | 14 / 5 — STGWA50IH65DF. Electrical characteristics. Table 7: IGBT switching … |
| 修订版 | 2 |
| 文件格式/大小 | PDF / 811 Kb |
| 文件语言 | 英语 |
STGWA50IH65DF. Electrical characteristics. Table 7: IGBT switching characteristics (snubbed inductive load). Symbol. Parameter
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STGWA50IH65DF Electrical characteristics Table 7: IGBT switching characteristics (snubbed inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit
VCC = 320 V, RG = 10 Ω, IC = 50 A, L = 100 μH, Csnub = 22 nF - 284 - (see Figure 23: "Test circuit for capacitive load switching") Turn-off switching E (1) off μJ energy VCC = 320 V, RG = 10 Ω, IC = 50 A, L = 100 μH, Csnub = 22 nF TJ = 175 °C - 469 - (see Figure 23: "Test circuit for capacitive load switching")
Notes:
(1)Including the tail of the collector current. DocID029659 Rev 2 5/14
STGWA50IH65DF Electrical characteristics Table 7: IGBT switching characteristics (snubbed inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit
VCC = 320 V, RG = 10 Ω, IC = 50 A, L = 100 μH, Csnub = 22 nF - 284 - (see Figure 23: "Test circuit for capacitive load switching") Turn-off switching E (1) off μJ energy VCC = 320 V, RG = 10 Ω, IC = 50 A, L = 100 μH, Csnub = 22 nF TJ = 175 °C - 469 - (see Figure 23: "Test circuit for capacitive load switching")
Notes:
(1)Including the tail of the collector current. DocID029659 Rev 2 5/14