Datasheet MMBT3906T (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | PNP Bipolar Transistor |
| 页数 / 页 | 7 / 2 — MMBT3906TT1. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. … |
| 修订版 | 3 |
| 文件格式/大小 | PDF / 97 Kb |
| 文件语言 | 英语 |
MMBT3906TT1. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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MMBT3906TT1 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (Note 3) V(BR)CEO Vdc (IC = −1.0 mAdc, IB = 0) −40 − Collector − Base Breakdown Voltage V(BR)CBO Vdc (IC = −10 mAdc, IE = 0) −40 − Emitter − Base Breakdown Voltage V(BR)EBO Vdc (IE = −10 mAdc, IC = 0) −5.0 − Base Cutoff Current IBL nAdc (VCE = −30 Vdc, VEB = −3.0 Vdc) − −50 Collector Cutoff Current ICEX nAdc (VCE = −30 Vdc, VEB = −3.0 Vdc) − −50
ON CHARACTERISTICS
(Note 3) DC Current Gain hFE − (IC = −0.1 mAdc, VCE = −1.0 Vdc) 60 − (IC = −1.0 mAdc, VCE = −1.0 Vdc) 80 − (IC = −10 mAdc, VCE = −1.0 Vdc) 100 300 (IC = −50 mAdc, VCE = −1.0 Vdc) 60 − (IC = −100 mAdc, VCE = −1.0 Vdc) 30 − Collector − Emitter Saturation Voltage VCE(sat) Vdc (IC = −10 mAdc, IB = −1.0 mAdc) − −0.25 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.4 Base − Emitter Saturation Voltage VBE(sat) Vdc (IC = −10 mAdc, IB = −1.0 mAdc) −0.65 −0.85 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.95
SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT MHz (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) 250 − Output Capacitance Cobo pF (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) − 4.5 Input Capacitance1 Cibo pF (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) − 10.0 Input Impedance hie k W (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) 2.0 12 Voltage Feedback Ratio hre X 10− 4 (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) 0.1 10 Small − Signal Current Gain hfe − (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) 100 400 Output Admittance hoe mmhos (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) 3.0 60 Noise Figure NF dB (VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k W, f = 1.0 kHz) − 4.0
SWITCHING CHARACTERISTICS
Delay Time (VCC = −3.0 Vdc, VBE = 0.5 Vdc) td − 35 ns Rise Time (IC = −10 mAdc, IB1 = −1.0 mAdc) tr − 35 Storage Time (VCC = −3.0 Vdc, IC = −10 mAdc) ts − 225 ns Fall Time (IB1 = IB2 = −1.0 mAdc) tf − 75 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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MMBT3906TT1 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (Note 3) V(BR)CEO Vdc (IC = −1.0 mAdc, IB = 0) −40 − Collector − Base Breakdown Voltage V(BR)CBO Vdc (IC = −10 mAdc, IE = 0) −40 − Emitter − Base Breakdown Voltage V(BR)EBO Vdc (IE = −10 mAdc, IC = 0) −5.0 − Base Cutoff Current IBL nAdc (VCE = −30 Vdc, VEB = −3.0 Vdc) − −50 Collector Cutoff Current ICEX nAdc (VCE = −30 Vdc, VEB = −3.0 Vdc) − −50
ON CHARACTERISTICS
(Note 3) DC Current Gain hFE − (IC = −0.1 mAdc, VCE = −1.0 Vdc) 60 − (IC = −1.0 mAdc, VCE = −1.0 Vdc) 80 − (IC = −10 mAdc, VCE = −1.0 Vdc) 100 300 (IC = −50 mAdc, VCE = −1.0 Vdc) 60 − (IC = −100 mAdc, VCE = −1.0 Vdc) 30 − Collector − Emitter Saturation Voltage VCE(sat) Vdc (IC = −10 mAdc, IB = −1.0 mAdc) − −0.25 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.4 Base − Emitter Saturation Voltage VBE(sat) Vdc (IC = −10 mAdc, IB = −1.0 mAdc) −0.65 −0.85 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.95
SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT MHz (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) 250 − Output Capacitance Cobo pF (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) − 4.5 Input Capacitance1 Cibo pF (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) − 10.0 Input Impedance hie k W (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) 2.0 12 Voltage Feedback Ratio hre X 10− 4 (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) 0.1 10 Small − Signal Current Gain hfe − (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) 100 400 Output Admittance hoe mmhos (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) 3.0 60 Noise Figure NF dB (VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k W, f = 1.0 kHz) − 4.0
SWITCHING CHARACTERISTICS
Delay Time (VCC = −3.0 Vdc, VBE = 0.5 Vdc) td − 35 ns Rise Time (IC = −10 mAdc, IB1 = −1.0 mAdc) tr − 35 Storage Time (VCC = −3.0 Vdc, IC = −10 mAdc) ts − 225 ns Fall Time (IB1 = IB2 = −1.0 mAdc) tf − 75 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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