Datasheet MMBT3904WT1, SMMBT3904WT1G, MMBT3906WT1, SMMBT3906WT1G (ON Semiconductor) - 8
制造商 | ON Semiconductor |
描述 | NPN and PNP Bipolar Transistor |
页数 / 页 | 13 / 8 — MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,. SMMBT3906WT1G, … |
修订版 | 9 |
文件格式/大小 | PDF / 132 Kb |
文件语言 | 英语 |
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,. SMMBT3906WT1G, PNP. MMBT3904WT1, SMMBT3904WT1
该数据表的模型线
文件文字版本
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1
TJ = 25°C TJ = 125°C 1.0 10 MMBT3904WT1 MMBT3904WT1 7.0 0.5 +25°C TO +125°C ° qVC FOR VCE(sat) 5.0 0 -55°C TO +25°C (mV/ C) ANCE (pF) Cibo -0.5 3.0 ACIT -55°C TO +25°C -1.0 CAP C COEFFICIENT 2.0 obo +25°C TO +125°C -1.5 qVB FOR VBE(sat) -2.0 1.0 0 20 40 60 80 100 120 140 160 180 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 IC, COLLECTOR CURRENT (mA) REVERSE BIAS VOLTAGE (VOLTS)
Figure 18. Temperature Coefficients Figure 19. Capacitance
1000 1 100 mS 10 mS VCE = 1 V TA = 25°C 1 mS 1 S 0.1 100 OR CURRENT (A) Thermal Limit 0.01 PRODUCT (MHz) , COLLECT , CURRENT−GAIN−BANDWIDTH I C f T 10 0.001 0.1 1 10 100 1000 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 20. Current Gain Bandwidth Product Figure 21. Safe Operating Area vs. Collector Current www.onsemi.com 8