Datasheet MMBT3904WT1, SMMBT3904WT1G, MMBT3906WT1, SMMBT3906WT1G (ON Semiconductor) - 10

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3906WT1, SMMBT3906WT1 h PARAMETERS
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C) 300 100 70 MMBT3906WT1 MMBT3906WT1 50 200 m 30 GAIN ANCE ( mhos) 100 20 ADMITT , CURRENT 70 feh 10 50 h , OUTPUT oe 7.0 30 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 28. Current Gain Figure 29. Output Admittance
20 10 MMBT3906WT1 7.0 MMBT3906WT1 10 -4 ) 7.0 5.0 Ω 5.0 TIO (X 10 ) 3.0 3.0 2.0 2.0 IMPEDANCE (k 1.0 0.7 1.0 ie 0.5 TAGE FEEDBACK RA h , INPUT 0.7 0.3 re 0.2 h , VOL 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 30. Input Impedance Figure 31. Voltage Feedback Ratio STATIC CHARACTERISTICS
1000 VCE = 1 V TJ = 150°C GAIN 25°C -55°C 100 , DC CURRENT FEh MMBT3906WT1 10 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA)
Figure 32. DC Current Gain www.onsemi.com 10