DatasheetPZT3904T1G (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | NPN Bipolar Transistor |
| 页数 / 页 | 7 / 2 — PZT3904T1G. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. … |
| 修订版 | 6 |
| 文件格式/大小 | PDF / 146 Kb |
| 文件语言 | 英语 |
PZT3904T1G. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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PZT3904T1G ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
(Note 2) Collector − Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector − Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL − 50 nAdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − 50
ON CHARACTERISTICS
(Note 3) DC Current Gain (Note 2) HFE − (IC = 0.1 mAdc, VCE = 1.0 Vdc) 40 − (IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 − (IC = 10 mAdc, VCE = 1.0 Vdc) 100 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 60 − (IC = 100 mAdc, VCE = 1.0 Vdc) 30 − Collector − Emitter Saturation Voltage (Note 3) VCE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) − 0.2 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.3 Base − Emitter Saturation Voltage (Note 3) VBE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.95
SMALL−SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 300 − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 5.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie 1.0 10 kW Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre 0.5 8.0 X 10− 4 Small − Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe 100 400 − Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe 1.0 40 mMhos Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz) nF − 5.0 dB
SWITCHING CHARACTERISTICS
Delay Time t (V d − 35 ns CC = 3.0 Vdc, VBE = − 0.5 Vdc, I Rise Time C = 10 mAdc, IB1 = 1.0 mAdc) tr − 35 Storage Time t (V s − 200 CC = 3.0 Vdc, I Fall Time C = 10 mAdc, IB1 = IB2 = 1.0 mAdc) tf − 50 2. FR− 5 = 1.0 0.75 0.062 in. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. +3 V +3 V DUTY CYCLE = 2% 10 < t t 1 < 500 ms 1 +10.9 V 300 ns +10.9 V DUTY CYCLE = 2% 275 275 10 k 10 k 0 -0.5 V CS < 4 pF* < 1 ns 1N916 CS < 4 pF* -9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit http://onsemi.com 2
PZT3904T1G ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
(Note 2) Collector − Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector − Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL − 50 nAdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − 50
ON CHARACTERISTICS
(Note 3) DC Current Gain (Note 2) HFE − (IC = 0.1 mAdc, VCE = 1.0 Vdc) 40 − (IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 − (IC = 10 mAdc, VCE = 1.0 Vdc) 100 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 60 − (IC = 100 mAdc, VCE = 1.0 Vdc) 30 − Collector − Emitter Saturation Voltage (Note 3) VCE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) − 0.2 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.3 Base − Emitter Saturation Voltage (Note 3) VBE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.95
SMALL−SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 300 − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 5.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie 1.0 10 kW Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre 0.5 8.0 X 10− 4 Small − Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe 100 400 − Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe 1.0 40 mMhos Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz) nF − 5.0 dB
SWITCHING CHARACTERISTICS
Delay Time t (V d − 35 ns CC = 3.0 Vdc, VBE = − 0.5 Vdc, I Rise Time C = 10 mAdc, IB1 = 1.0 mAdc) tr − 35 Storage Time t (V s − 200 CC = 3.0 Vdc, I Fall Time C = 10 mAdc, IB1 = IB2 = 1.0 mAdc) tf − 50 2. FR− 5 = 1.0 0.75 0.062 in. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. +3 V +3 V DUTY CYCLE = 2% 10 < t t 1 < 500 ms 1 +10.9 V 300 ns +10.9 V DUTY CYCLE = 2% 275 275 10 k 10 k 0 -0.5 V CS < 4 pF* < 1 ns 1N916 CS < 4 pF* -9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit http://onsemi.com 2