DatasheetPZT3904T1G (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | NPN Bipolar Transistor |
| 页数 / 页 | 7 / 3 — PZT3904T1G. TYPICAL TRANSIENT CHARACTERISTICS. Figure 3. Capacitance. … |
| 修订版 | 6 |
| 文件格式/大小 | PDF / 146 Kb |
| 文件语言 | 英语 |
PZT3904T1G. TYPICAL TRANSIENT CHARACTERISTICS. Figure 3. Capacitance. Figure 4. Charge Data. Figure 5. Turn −On Time
该数据表的模型线
文件文字版本
PZT3904T1G TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 5000 VCC = 40 V 3000 7.0 IC/IB = 10 2000 5.0 1000 700 ANCE (pF) Cibo 3.0 500 ACIT Q Q, CHARGE (pC) 300 T CAP 2.0 Cobo 200 QA 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance Figure 4. Charge Data
500 500 IC/IB = 10 V 300 300 CC = 40 V IC/IB = 10 200 200 100 100 70 tr @ VCC = 3.0 V 70 50 TIME (ns) 50 TIME (ns) 30 30 40 V 20 t , RISE r 20 15 V 10 10 7 t 2.0 V 7 d @ VOB = 0 V 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time Figure 6. Rise Time
500 500 t′s = ts - 1/8 tf V 300 300 CC = 40 V I I IB1 = IB2 I 200 C/IB = 20 C/IB = 10 200 B1 = IB2 IC/IB = 20 100 100 70 70 TIME (ns) 50 IC/IB = 20 TIME (ns) 50 ALL IC/IB = 10 I ORAGE 30 30 C/IB = 10 t , F f 20 20 t , ST′ s 10 10 7 7 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 3
TJ = 25°C TJ = 125°C 10 5000 VCC = 40 V 3000 7.0 IC/IB = 10 2000 5.0 1000 700 ANCE (pF) Cibo 3.0 500 ACIT Q Q, CHARGE (pC) 300 T CAP 2.0 Cobo 200 QA 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance Figure 4. Charge Data
500 500 IC/IB = 10 V 300 300 CC = 40 V IC/IB = 10 200 200 100 100 70 tr @ VCC = 3.0 V 70 50 TIME (ns) 50 TIME (ns) 30 30 40 V 20 t , RISE r 20 15 V 10 10 7 t 2.0 V 7 d @ VOB = 0 V 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time Figure 6. Rise Time
500 500 t′s = ts - 1/8 tf V 300 300 CC = 40 V I I IB1 = IB2 I 200 C/IB = 20 C/IB = 10 200 B1 = IB2 IC/IB = 20 100 100 70 70 TIME (ns) 50 IC/IB = 20 TIME (ns) 50 ALL IC/IB = 10 I ORAGE 30 30 C/IB = 10 t , F f 20 20 t , ST′ s 10 10 7 7 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 3