Datasheet FDN336P (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | Single P-Channel Logic Level PowerTrench MOSFET -20V, -1.3A, 200mΩ |
| 页数 / 页 | 5 / 2 — Electrical Characteristics. Symbol. Parameter. Conditions. Min. Typ. Max. … |
| 修订版 | 4 |
| 文件格式/大小 | PDF / 202 Kb |
| 文件语言 | 英语 |
Electrical Characteristics. Symbol. Parameter. Conditions. Min. Typ. Max. Units. OFF CHARACTERISTICS. ON CHARACTERISTICS
该数据表的模型线
文件文字版本
Electrical Characteristics
(T = 25 OC unless otherwise noted ) A
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS
BV Drain-Source Breakdown Voltage V = 0 V, I = -250 µA -20 V DSS GS D ∆BV /∆T Breakdown Voltage Temp. Coefficient I = -250 µA, Referenced to 25 oC -16 mV /o C DSS J D I Zero Gate Voltage Drain Current V = -16 V, V = 0 V -1 µA DSS DS GS T = 55°C -10 µA J I Gate - Body Leakage, Forward V = 8 V, V = 0 V 100 nA GSSF GS DS I Gate - Body Leakage, Reverse V = -8 V, V = 0 V -100 nA GSSR GS DS
ON CHARACTERISTICS
(Note 2) V Gate Threshold Voltage V = V , I = -250 µA -0.4 -0.9 -1.5 V GS(th) DS GS D ∆V /∆T Gate Threshold Voltage Temp. Coefficient I = -250 µA, Referenced to 25 oC 3 mV /oC GS(th) J D R Static Drain-Source On-Resistance V = -4.5 V, I = -1.3 A 0.122 0.2 Ω DS(ON) GS D T =125°C 0.18 0.32
J
V = -2.5 V, I = -1.1 A 0.19 0.27 GS D I On-State Drain Current V = -4.5 V, V = -5 V -5 A D(ON) GS DS g Forward Transconductance V = -4.5 V, I = -2 A 4 S FS DS D
DYNAMIC CHARACTERISTICS
C Input Capacitance V = -10 V, V = 0 V, 330 pF iss DS GS f = 1.0 MHz C Output Capacitance 80 pF oss C Reverse Transfer Capacitance 35 pF rss
SWITCHING CHARACTERISTICS
(Note 2) t Turn - On Delay Time V = -5 V, I = -0.5 A, 7 15 ns D(on) DD D V = -4.5 V, R = 6 Ω t Turn - On Rise Time GS GEN 12 22 ns r t Turn - Off Delay Time 16 26 ns D(off) t Turn - Off Fall Time 5 12 ns f Q Total Gate Charge V = -10 V, I = - 2 A, 3.6 5 nC g DS D V = -4.5 V GS Q Gate-Source Charge 0.8 nC gs Q Gate-Drain Charge 0.7 nC gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I Maximum Continuous Drain-Source Diode Forward Current -0.42 A S V Drain-Source Diode Forward Voltage V = 0 V, I = -0.42 A (Note) -0.7 -1.2 V SD GS S Note: 1. Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by JA θJC design while Rθ is determined by the user's board design. CA a. 250oC/W when mounted on b. 270oC/W when mounted on a 0.02 in2 pad of 2oz Cu. a 0.001 in2 pad of 2oz Cu. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. www.onsemi.com 2
(T = 25 OC unless otherwise noted ) A
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS
BV Drain-Source Breakdown Voltage V = 0 V, I = -250 µA -20 V DSS GS D ∆BV /∆T Breakdown Voltage Temp. Coefficient I = -250 µA, Referenced to 25 oC -16 mV /o C DSS J D I Zero Gate Voltage Drain Current V = -16 V, V = 0 V -1 µA DSS DS GS T = 55°C -10 µA J I Gate - Body Leakage, Forward V = 8 V, V = 0 V 100 nA GSSF GS DS I Gate - Body Leakage, Reverse V = -8 V, V = 0 V -100 nA GSSR GS DS
ON CHARACTERISTICS
(Note 2) V Gate Threshold Voltage V = V , I = -250 µA -0.4 -0.9 -1.5 V GS(th) DS GS D ∆V /∆T Gate Threshold Voltage Temp. Coefficient I = -250 µA, Referenced to 25 oC 3 mV /oC GS(th) J D R Static Drain-Source On-Resistance V = -4.5 V, I = -1.3 A 0.122 0.2 Ω DS(ON) GS D T =125°C 0.18 0.32
J
V = -2.5 V, I = -1.1 A 0.19 0.27 GS D I On-State Drain Current V = -4.5 V, V = -5 V -5 A D(ON) GS DS g Forward Transconductance V = -4.5 V, I = -2 A 4 S FS DS D
DYNAMIC CHARACTERISTICS
C Input Capacitance V = -10 V, V = 0 V, 330 pF iss DS GS f = 1.0 MHz C Output Capacitance 80 pF oss C Reverse Transfer Capacitance 35 pF rss
SWITCHING CHARACTERISTICS
(Note 2) t Turn - On Delay Time V = -5 V, I = -0.5 A, 7 15 ns D(on) DD D V = -4.5 V, R = 6 Ω t Turn - On Rise Time GS GEN 12 22 ns r t Turn - Off Delay Time 16 26 ns D(off) t Turn - Off Fall Time 5 12 ns f Q Total Gate Charge V = -10 V, I = - 2 A, 3.6 5 nC g DS D V = -4.5 V GS Q Gate-Source Charge 0.8 nC gs Q Gate-Drain Charge 0.7 nC gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I Maximum Continuous Drain-Source Diode Forward Current -0.42 A S V Drain-Source Diode Forward Voltage V = 0 V, I = -0.42 A (Note) -0.7 -1.2 V SD GS S Note: 1. Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R is guaranteed by JA θJC design while Rθ is determined by the user's board design. CA a. 250oC/W when mounted on b. 270oC/W when mounted on a 0.02 in2 pad of 2oz Cu. a 0.001 in2 pad of 2oz Cu. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. www.onsemi.com 2