Datasheet FDN336P (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | Single P-Channel Logic Level PowerTrench MOSFET -20V, -1.3A, 200mΩ |
| 页数 / 页 | 5 / 3 — Typical Electrical Characteristics. Figure 1. On-Region Characteristics. … |
| 修订版 | 4 |
| 文件格式/大小 | PDF / 202 Kb |
| 文件语言 | 英语 |
Typical Electrical Characteristics. Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
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Typical Electrical Characteristics
10 2 V = -4.5V GS 1.8 8 -3.5V -3.0V 1.6 V = -2.5 V GS 6 -2.5V 1.4 -3.0V 4 -3.5V 1.2 DS(on) -4.0V -4.5V R , NORMALIZED 2 -2.0V 1 D- I , DRAIN-SOURCE CURRENT (A) DRAIN-SOURCE ON-RESISTANCE 0 0.8 0 1 2 3 4 5 0 2 4 6 8 10 -V , DRAIN-SOURCE VOLTAGE (V) DS - I , DRAIN CURRENT (A) D
Figure 1. On-Region Characteristics
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Figure 2. On-Resistance Variation with Drain Current and Gate
1.6 0.5 I = -1.3A I = -0.6A D D V = -4.5V 0.4 1.4 GS 0.3 1.2 0.2 1 T = 125°C A DS(ON) 0.1 R , NORMALIZED 0.8 DS(ON) 25°C R , ON-RESISTANCE (OHM) DRAIN-SOURCE ON-RESISTANCE 0 0.6 0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 - V , GATE TO SOURCE VOLTAGE (V) GS T , JUNCTION TEMPERATURE (°C) J
Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Gate-to-Source Voltage. with Temperature
. 4 10 V = 0V GS V = -5V DS T = -55°C J 25°C T = 125°C 3 1 J 125°C 25°C -55°C 2 0.1 D 1 - I , DRAIN CURRENT (A) 0.01 S- I , REVERSE DRAIN CURRENT (A) 00.5 1 1.5 2 2.5 0.0010.2 0.4 0.6 0.8 1 1.2 1.4 -V , GATE TO SOURCE VOLTAGE (V) GS -V , BODY DIODE FORWARD VOLTAGE (V) SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
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10 2 V = -4.5V GS 1.8 8 -3.5V -3.0V 1.6 V = -2.5 V GS 6 -2.5V 1.4 -3.0V 4 -3.5V 1.2 DS(on) -4.0V -4.5V R , NORMALIZED 2 -2.0V 1 D- I , DRAIN-SOURCE CURRENT (A) DRAIN-SOURCE ON-RESISTANCE 0 0.8 0 1 2 3 4 5 0 2 4 6 8 10 -V , DRAIN-SOURCE VOLTAGE (V) DS - I , DRAIN CURRENT (A) D
Figure 1. On-Region Characteristics
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Figure 2. On-Resistance Variation with Drain Current and Gate
1.6 0.5 I = -1.3A I = -0.6A D D V = -4.5V 0.4 1.4 GS 0.3 1.2 0.2 1 T = 125°C A DS(ON) 0.1 R , NORMALIZED 0.8 DS(ON) 25°C R , ON-RESISTANCE (OHM) DRAIN-SOURCE ON-RESISTANCE 0 0.6 0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 - V , GATE TO SOURCE VOLTAGE (V) GS T , JUNCTION TEMPERATURE (°C) J
Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Gate-to-Source Voltage. with Temperature
. 4 10 V = 0V GS V = -5V DS T = -55°C J 25°C T = 125°C 3 1 J 125°C 25°C -55°C 2 0.1 D 1 - I , DRAIN CURRENT (A) 0.01 S- I , REVERSE DRAIN CURRENT (A) 00.5 1 1.5 2 2.5 0.0010.2 0.4 0.6 0.8 1 1.2 1.4 -V , GATE TO SOURCE VOLTAGE (V) GS -V , BODY DIODE FORWARD VOLTAGE (V) SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
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