Datasheet GS66508T (GaN Systems)

GS66508T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet
Features
• 650 V enhancement mode power switch • Top-side cooled configuration • RDS(on) = 50 mΩ • IDS(max) = 30 A • Ultra-low FOM Island Technology™ die • Low inductance GaNPX® package
Package Outline Circuit Symbol
• Easy gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 / +10V) • Very high switching frequency (> 100 MHz) • Fast and controllable fall and rise times • Reverse current capability • Zero reverse recovery loss • Small 6.9 x 4.5 mm2 PCB footprint • Dual gate pads for optimal board layout The thermal pad is internally connected to • RoHS 6 compliant Source (S- pin 3) and substrate
Applications Description
• High efficiency power conversion The GS66508T is an enhancement mode GaN-on- • High density power conversion silicon power transistor. The properties of GaN • AC-DC Converters allow for high current, high voltage breakdown • Bridgeless Totem Pole PFC and high switching frequency. GaN Systems • ZVS Phase Shifted Full Bridge • implements patented
Island Technology®
cell Half Bridge topologies • Synchronous Buck or Boost layout for high-current die performance & yield. • Uninterruptable Power Supplies
GaNPX®
packaging enables low inductance & low • Industrial Motor Drives thermal resistance in a small package. The • Single and 3Φ inverter legs GS66508T is a top-side cooled transistor that offers • Solar and Wind Power very low junction-to-case thermal resistance for • Fast Battery Charging • demanding high power applications. These Class D Audio amplifiers • features combine to provide very high efficiency 400 V input DC-DC converters • On Board Battery Chargers power switching. • Traction Drive Rev 180424 © 2009-2018 GaN Systems Inc. 1 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback