Datasheet GS66508T (GaN Systems) - 2

制造商GaN Systems
描述650V Enhancement Mode GaN Transistor
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Parameter. Symbol. Value. Unit. Units. Ordering. Reel. code. Package type. Packing. method. Qty. Diameter. Width

Parameter Symbol Value Unit Units Ordering Reel code Package type Packing method Qty Diameter Width

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GS66508T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet Absolute Maximum Ratings (Tcase = 25 °C except as noted)
Parameter Symbol Value Unit
Operating Junction Temperature TJ -55 to +150 °C Storage Temperature Range TS -55 to +150 °C Drain-to-Source Voltage VDS 650 V Transient Drain-to-Source Voltage (note 1) VDS(transient) 750 V Gate-to-Source Voltage VGS -10 to +7 V Gate-to-Source Voltage - transient (note 1) VGS(transient) -20 to +10 V Continuous Drain Current (Tcase=25 °C) (note 2) IDS 30 A Continuous Drain Current Tcase=100 °C) (note 2) IDS 25 A Pulse Drain Current (Pulse width 100 µs) IDS Pulse 72 A (1) For 1 µs (2) Limited by saturation Thermal Characteristics (Typical values unless otherwise noted)
Parameter Symbol Value Units
Thermal Resistance (junction-to-case) – top side RΘJC 0.5 °C /W Thermal Resistance (junction-to-board) (note 3) RΘJB 5.0 °C /W Maximum Soldering Temperature (MSL3 rated) TSOLD 260 °C Ordering Information
Ordering Reel code Package type Packing method Qty Reel Diameter Width
GS66508T-TR GaNPX® Top-Side Cooled Tape-and-Reel 3000 13” (330mm) 16mm GS66508T-MR GaNPX® Top-Side Cooled Mini-Reel 250 7” (180mm) 16mm Rev 180424 © 2009-2018 GaN Systems Inc. 2 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback