Datasheet GS66508T (GaN Systems) - 6
| 制造商 | GaN Systems |
| 描述 | 650V Enhancement Mode GaN Transistor |
| 页数 / 页 | 17 / 6 — Electrical Performance Graphs |
| 文件格式/大小 | PDF / 1.0 Mb |
| 文件语言 | 英语 |
Electrical Performance Graphs
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文件文字版本
GS66508T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet
Electrical Performance Graphs
GS66508T IDS vs. VDS, TJ dependence GS66508T Gate Charge, QG Characteristic Figure 5: Typical IDS vs. VDS @ VGS = 6 V Figure 6: Typical VGS vs. QG @ VDS = 100, 400 V GS66508T Capacitance Characteristics GS66508T Stored Energy Characteristic Figure 7: Typical CISS, COSS, CRSS vs. VDS Figure 8: Typical COSS Stored Energy Rev 180424 © 2009-2018 GaN Systems Inc. 6 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback
Electrical Performance Graphs
GS66508T IDS vs. VDS, TJ dependence GS66508T Gate Charge, QG Characteristic Figure 5: Typical IDS vs. VDS @ VGS = 6 V Figure 6: Typical VGS vs. QG @ VDS = 100, 400 V GS66508T Capacitance Characteristics GS66508T Stored Energy Characteristic Figure 7: Typical CISS, COSS, CRSS vs. VDS Figure 8: Typical COSS Stored Energy Rev 180424 © 2009-2018 GaN Systems Inc. 6 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback